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202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

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Original languageEnglish
TitleSemiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Place of publicationNEW YORK
PublisherIEEE Computer Society
Publication date2010
Pages172-173
Number of pages2
ISBN (Print)9781424456833
DOIs
StatePublished

Conference

Conference22nd IEEE International Semiconductor Laser Conference
CountryJapan
CityKyoto
Period26/09/1030/09/10
Internet addresshttp://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5623519

Abstract

Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.

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