Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
| Original language | English |
|---|---|
| Title | 22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE |
| Place of publication | NEW YORK |
| Publisher | IEEE Computer Society |
| Publication date | 2010 |
| Pages | 172-173 |
| Number of pages | 2 |
| ISBN (Print) | 978-1-4244-5684-0 |
| DOIs | |
| State | Published |
| Conference | 22nd IEEE International Semiconductor Laser Conference |
|---|---|
| City | Kyoto |
| Period | 26/09/10 → 30/09/10 |
| Other |
Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.