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Broadly Tunable InGaAsP-InP Strained Multiquantum-Well External Cavity Diode Laser

Broadly Tunable InGaAsP-InP Strained Multiquantum-Well External Cavity Diode Laser

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Original languageEnglish
Pages1205-1207
Number of pages3
JournalIEEE Photonics Technology Letters
Journal publication date15 Aug 2010
Volume22
Issue16
DOIs
StatePublished

Abstract

In this letter, we demonstrate a broadly tunable InGaAs-InP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 1494-1667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.

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