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Carrier mobility, band tails and defects in microcrystalline silicon

Carrier mobility, band tails and defects in microcrystalline silicon

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Original languageEnglish
Title of host publication16 Iscmp: Progress in Solid State and Molecular Electronics, Ionics and Photonics
EditorsD DimovaMalinovska, D Nesheva, AG Petrov, MT Primatarowa
Place of publicationBristol
PublisherInstitute of Physics
Publication date2010
Pages-
Number of pages12
ISBN (Print)*****************
DOIs
StatePublished

Conference

Conference16th International School on Condensed Matter Physics Meeting
Abbreviated title16 ISCMP
CountryBulgaria
CityVarna
Period29/08/103/09/10

Abstract

The development of microcrystalline silicon thin films and devices is briefly reviewed. Transport mechanisms, and the attendant key parameters of carrier mobility, band-tail width and defect density, are linked to film structure and composition. In particular we discuss the wide (but systematic) variations in time-of-flight mobility and its unusual field-dependence. While microcrystalline silicon remains an inferior semiconductor to single-crystal silicon, we propose, and support by means of a computer model, that present device-grade material may be of sufficient quality to justify re-examining whether useful thin-film bipolar devices might be developed. These could find application as more sensitive photo-detectors, and as current drivers in organic LED displays and logic circuits.

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