Electron and hole transport in microcrystalline silicon solar cells studied by time-of-flight photocurrent spectroscopy. / Dylla, T.; Reynolds, S.; Carius, R.; Finger, F.
In: Journal of Non-Crystalline Solids, 06.2006, p. 1093.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electron and hole transport in microcrystalline silicon solar cells studied by time-of-flight photocurrent spectroscopy
A1 - Dylla,T.
A1 - Reynolds,S.
A1 - Carius,R.
A1 - Finger,F.
AU - Dylla,T.
AU - Reynolds,S.
AU - Carius,R.
AU - Finger,F.
PY - 2006/6
Y1 - 2006/6
N2 - A photocurrent time-of-flight study of carrier transport in microcrystalline silicon pin diodes prepared over a range of crystallinities is presented. Electron and hole drift mobilities at a crystalline volume fraction >0.35 are typically 3.8 and 1.3 cm2/(V s) respectively at 300 K and a thickness to electric field ratio of 1.8 × 10-7 cm2/V. A factor of five enhancement in hole mobility over amorphous silicon persists at a crystalline volume fraction as low as 0.1. Current decays are dispersive and mobilities are thermally activated, although detailed field-dependence is still under investigation. Evidence for a sharp fall in the density of states at 0.13 eV above the valence band edge is presented. Similarities in behaviour with certain amorphous and polymorphous silicon samples are identified.
AB - A photocurrent time-of-flight study of carrier transport in microcrystalline silicon pin diodes prepared over a range of crystallinities is presented. Electron and hole drift mobilities at a crystalline volume fraction >0.35 are typically 3.8 and 1.3 cm2/(V s) respectively at 300 K and a thickness to electric field ratio of 1.8 × 10-7 cm2/V. A factor of five enhancement in hole mobility over amorphous silicon persists at a crystalline volume fraction as low as 0.1. Current decays are dispersive and mobilities are thermally activated, although detailed field-dependence is still under investigation. Evidence for a sharp fall in the density of states at 0.13 eV above the valence band edge is presented. Similarities in behaviour with certain amorphous and polymorphous silicon samples are identified.
KW - Solar cells
KW - Band structure
KW - Microcrystallinity
KW - Nanocrystals
KW - Medium-range order
U2 - 10.1016/j.jnoncrysol.2005.12.015
DO - 10.1016/j.jnoncrysol.2005.12.015
M1 - Article
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
SN - 0022-3093
SP - 1093
ER -