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Electron and hole transport in microcrystalline silicon solar cells studied by time-of-flight photocurrent spectroscopy

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Electron and hole transport in microcrystalline silicon solar cells studied by time-of-flight photocurrent spectroscopy. / Dylla, T.; Reynolds, S.; Carius, R.; Finger, F.

In: Journal of Non-Crystalline Solids, Vol. 352, No. 9-20, 2006, p. 1093-1096.

Research output: Contribution to journalArticle

Harvard

Dylla, T, Reynolds, S, Carius, R & Finger, F 2006, 'Electron and hole transport in microcrystalline silicon solar cells studied by time-of-flight photocurrent spectroscopy' Journal of Non-Crystalline Solids, vol 352, no. 9-20, pp. 1093-1096., 10.1016/j.jnoncrysol.2005.12.015

APA

Dylla, T., Reynolds, S., Carius, R., & Finger, F. (2006). Electron and hole transport in microcrystalline silicon solar cells studied by time-of-flight photocurrent spectroscopy. Journal of Non-Crystalline Solids, 352(9-20), 1093-1096. 10.1016/j.jnoncrysol.2005.12.015

Vancouver

Dylla T, Reynolds S, Carius R, Finger F. Electron and hole transport in microcrystalline silicon solar cells studied by time-of-flight photocurrent spectroscopy. Journal of Non-Crystalline Solids. 2006;352(9-20):1093-1096. Available from: 10.1016/j.jnoncrysol.2005.12.015

Author

Dylla, T.; Reynolds, S.; Carius, R.; Finger, F. / Electron and hole transport in microcrystalline silicon solar cells studied by time-of-flight photocurrent spectroscopy.

In: Journal of Non-Crystalline Solids, Vol. 352, No. 9-20, 2006, p. 1093-1096.

Research output: Contribution to journalArticle

Bibtex - Download

@article{31b412d6dcf24b0fbb7eff87cfecdd04,
title = "Electron and hole transport in microcrystalline silicon solar cells studied by time-of-flight photocurrent spectroscopy",
keywords = "Solar cells, Band structure, Microcrystallinity, Nanocrystals, Medium-range order",
author = "T. Dylla and S. Reynolds and R. Carius and F. Finger",
note = "Amorphous and Nanocrystalline Semiconductors - Science and Technology - Proceedings of the 21st International Conference on Amorphous and Nanocrystalline Semiconductors - Science and Technology",
year = "2006",
doi = "10.1016/j.jnoncrysol.2005.12.015",
volume = "352",
number = "9-20",
pages = "1093--1096",
journal = "Journal of Non-Crystalline Solids",
issn = "0022-3093",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Electron and hole transport in microcrystalline silicon solar cells studied by time-of-flight photocurrent spectroscopy

A1 - Dylla,T.

A1 - Reynolds,S.

A1 - Carius,R.

A1 - Finger,F.

AU - Dylla,T.

AU - Reynolds,S.

AU - Carius,R.

AU - Finger,F.

PY - 2006

Y1 - 2006

N2 - A photocurrent time-of-flight study of carrier transport in microcrystalline silicon pin diodes prepared over a range of crystallinities is presented. Electron and hole drift mobilities at a crystalline volume fraction >0.35 are typically 3.8 and 1.3 cm2/(V s) respectively at 300 K and a thickness to electric field ratio of 1.8 × 10-7 cm2/V. A factor of five enhancement in hole mobility over amorphous silicon persists at a crystalline volume fraction as low as 0.1. Current decays are dispersive and mobilities are thermally activated, although detailed field-dependence is still under investigation. Evidence for a sharp fall in the density of states at 0.13 eV above the valence band edge is presented. Similarities in behaviour with certain amorphous and polymorphous silicon samples are identified.

AB - A photocurrent time-of-flight study of carrier transport in microcrystalline silicon pin diodes prepared over a range of crystallinities is presented. Electron and hole drift mobilities at a crystalline volume fraction >0.35 are typically 3.8 and 1.3 cm2/(V s) respectively at 300 K and a thickness to electric field ratio of 1.8 × 10-7 cm2/V. A factor of five enhancement in hole mobility over amorphous silicon persists at a crystalline volume fraction as low as 0.1. Current decays are dispersive and mobilities are thermally activated, although detailed field-dependence is still under investigation. Evidence for a sharp fall in the density of states at 0.13 eV above the valence band edge is presented. Similarities in behaviour with certain amorphous and polymorphous silicon samples are identified.

KW - Solar cells

KW - Band structure

KW - Microcrystallinity

KW - Nanocrystals

KW - Medium-range order

U2 - 10.1016/j.jnoncrysol.2005.12.015

DO - 10.1016/j.jnoncrysol.2005.12.015

M1 - Article

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

IS - 9-20

VL - 352

SP - 1093

EP - 1096

ER -

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