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Excimer laser wet oxidation of hydrogenated amorphous silicon

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Excimer laser wet oxidation of hydrogenated amorphous silicon. / Persheyev, Saydulla K.; Fan, Yongchang; Reynolds, Steve; Rose, Mervyn J.

In: Physica Status Solidi C: Current Topics in Solid State Physics, Vol. 7, No. 3-4, 2010, p. 968-971.

Research output: Contribution to journalArticle

Harvard

Persheyev, SK, Fan, Y, Reynolds, S & Rose, MJ 2010, 'Excimer laser wet oxidation of hydrogenated amorphous silicon' Physica Status Solidi C: Current Topics in Solid State Physics, vol 7, no. 3-4, pp. 968-971., 10.1002/pssc.200982875

APA

Persheyev, S. K., Fan, Y., Reynolds, S., & Rose, M. J. (2010). Excimer laser wet oxidation of hydrogenated amorphous silicon. Physica Status Solidi C: Current Topics in Solid State Physics, 7(3-4), 968-971. 10.1002/pssc.200982875

Vancouver

Persheyev SK, Fan Y, Reynolds S, Rose MJ. Excimer laser wet oxidation of hydrogenated amorphous silicon. Physica Status Solidi C: Current Topics in Solid State Physics. 2010;7(3-4):968-971. Available from: 10.1002/pssc.200982875

Author

Persheyev, Saydulla K.; Fan, Yongchang; Reynolds, Steve; Rose, Mervyn J. / Excimer laser wet oxidation of hydrogenated amorphous silicon.

In: Physica Status Solidi C: Current Topics in Solid State Physics, Vol. 7, No. 3-4, 2010, p. 968-971.

Research output: Contribution to journalArticle

Bibtex - Download

@article{5e4f9e682ff54b3683dc25121610b553,
title = "Excimer laser wet oxidation of hydrogenated amorphous silicon",
keywords = "THIN-FILM TRANSISTORS, CRYSTALLIZATION, SPECTRA",
author = "Persheyev, {Saydulla K.} and Yongchang Fan and Steve Reynolds and Rose, {Mervyn J.}",
year = "2010",
doi = "10.1002/pssc.200982875",
volume = "7",
number = "3-4",
pages = "968--971",
journal = "Physica Status Solidi C: Current Topics in Solid State Physics",
issn = "1862-6351",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Excimer laser wet oxidation of hydrogenated amorphous silicon

A1 - Persheyev,Saydulla K.

A1 - Fan,Yongchang

A1 - Reynolds,Steve

A1 - Rose,Mervyn J.

AU - Persheyev,Saydulla K.

AU - Fan,Yongchang

AU - Reynolds,Steve

AU - Rose,Mervyn J.

PY - 2010

Y1 - 2010

N2 - <p>We present results of the excimer laser wet oxidisation of submicron thick hydrogenated amorphous silicon films (a-Si: H) deposited on silicon wafer. The a-Si: H film irradiation was carried out by multiple-pulses, large-spot, 20 ns KrF (248 nm) excimer laser and fluences of 140-300 mJ/cm(2), near to the silicon ablation threshold in an air atmosphere. The oxygen and hydrogen content and bonding in the thin films were analysed by Fourier Transform Infrared Spectroscopy (FTIR) techniques in the range 400-4000 cm(-1). We demonstrate that the presence of water molecules on the silicon surface will increase oxidation by 30-40%. The bonded hydrogen content in the films after oxidation annealing is decreased from 12 down to around 1 atomic percent. Wet oxidised surfaces present highly hydrophobic properties which appears to be determined by the amorphous silicon structure transformation and silicon surface energy modification forming a silicon/oxide (nitride) interface. (C) 2010 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim</p>

AB - <p>We present results of the excimer laser wet oxidisation of submicron thick hydrogenated amorphous silicon films (a-Si: H) deposited on silicon wafer. The a-Si: H film irradiation was carried out by multiple-pulses, large-spot, 20 ns KrF (248 nm) excimer laser and fluences of 140-300 mJ/cm(2), near to the silicon ablation threshold in an air atmosphere. The oxygen and hydrogen content and bonding in the thin films were analysed by Fourier Transform Infrared Spectroscopy (FTIR) techniques in the range 400-4000 cm(-1). We demonstrate that the presence of water molecules on the silicon surface will increase oxidation by 30-40%. The bonded hydrogen content in the films after oxidation annealing is decreased from 12 down to around 1 atomic percent. Wet oxidised surfaces present highly hydrophobic properties which appears to be determined by the amorphous silicon structure transformation and silicon surface energy modification forming a silicon/oxide (nitride) interface. (C) 2010 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim</p>

KW - THIN-FILM TRANSISTORS

KW - CRYSTALLIZATION

KW - SPECTRA

U2 - 10.1002/pssc.200982875

DO - 10.1002/pssc.200982875

M1 - Article

JO - Physica Status Solidi C: Current Topics in Solid State Physics

JF - Physica Status Solidi C: Current Topics in Solid State Physics

SN - 1862-6351

IS - 3-4

VL - 7

SP - 968

EP - 971

ER -

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