High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers. / Nikitichev, D. I.; Ding, Y.; Ruiz, M.; Calligaro, M.; Michel, N.; Krakowski, M.; Krestnikov, I.; Livshits, D.; Cataluna, M. A. ; Rafailov, E. U. .
In: Applied Physics B: Lasers and Optics, Vol. 103, No. 3, 06.2011, p. 609-613.Research output: Contribution to journal › Article
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TY - JOUR
T1 - High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers
A1 - Nikitichev,D. I.
A1 - Ding,Y.
A1 - Ruiz,M.
A1 - Calligaro,M.
A1 - Michel,N.
A1 - Krakowski,M.
A1 - Krestnikov,I.
A1 - Livshits,D.
A1 - Cataluna,M. A.
A1 - Rafailov,E. U.
AU - Nikitichev,D. I.
AU - Ding,Y.
AU - Ruiz,M.
AU - Calligaro,M.
AU - Michel,N.
AU - Krakowski,M.
AU - Krestnikov,I.
AU - Livshits,D.
AU - Cataluna,M. A.
AU - Rafailov,E. U.
PY - 2011/6
Y1 - 2011/6
N2 - <p>We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented.</p>
AB - <p>We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented.</p>
KW - SPONTANEOUS EMISSION FACTOR
KW - SEMICONDUCTOR-LASERS
KW - OUTPUT POWER
KW - DIODE-LASERS
U2 - 10.1007/s00340-010-4290-5
DO - 10.1007/s00340-010-4290-5
M1 - Article
JO - Applied Physics B: Lasers and Optics
JF - Applied Physics B: Lasers and Optics
SN - 0946-2171
IS - 3
VL - 103
SP - 609
EP - 613
ER -