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High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers

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High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers. / Nikitichev, D. I.; Ding, Y.; Ruiz, M.; Calligaro, M.; Michel, N.; Krakowski, M.; Krestnikov, I.; Livshits, D.; Cataluna, M. A. ; Rafailov, E. U. .

In: Applied Physics B: Lasers and Optics, Vol. 103, No. 3, 06.2011, p. 609-613.

Research output: Contribution to journalArticle

Harvard

Nikitichev, DI, Ding, Y, Ruiz, M, Calligaro, M, Michel, N, Krakowski, M, Krestnikov, I, Livshits, D, Cataluna, MA & Rafailov, EU 2011, 'High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers' Applied Physics B: Lasers and Optics, vol 103, no. 3, pp. 609-613., 10.1007/s00340-010-4290-5

APA

Nikitichev, D. I., Ding, Y., Ruiz, M., Calligaro, M., Michel, N., Krakowski, M., ... Rafailov, E. U. (2011). High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers. Applied Physics B: Lasers and Optics, 103(3), 609-613. 10.1007/s00340-010-4290-5

Vancouver

Nikitichev DI, Ding Y, Ruiz M, Calligaro M, Michel N, Krakowski M et al. High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers. Applied Physics B: Lasers and Optics. 2011 Jun;103(3):609-613. Available from: 10.1007/s00340-010-4290-5

Author

Nikitichev, D. I.; Ding, Y.; Ruiz, M.; Calligaro, M.; Michel, N.; Krakowski, M.; Krestnikov, I.; Livshits, D.; Cataluna, M. A. ; Rafailov, E. U. / High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers.

In: Applied Physics B: Lasers and Optics, Vol. 103, No. 3, 06.2011, p. 609-613.

Research output: Contribution to journalArticle

Bibtex - Download

@article{def16f608cc3405181c21c90d27eba49,
title = "High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers",
keywords = "SPONTANEOUS EMISSION FACTOR, SEMICONDUCTOR-LASERS, OUTPUT POWER, DIODE-LASERS",
author = "Nikitichev, {D. I.} and Y. Ding and M. Ruiz and M. Calligaro and N. Michel and M. Krakowski and I. Krestnikov and D. Livshits and Cataluna, {M. A.} and Rafailov, {E. U.}",
year = "2011",
doi = "10.1007/s00340-010-4290-5",
volume = "103",
number = "3",
pages = "609--613",
journal = "Applied Physics B: Lasers and Optics",
issn = "0946-2171",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers

A1 - Nikitichev,D. I.

A1 - Ding,Y.

A1 - Ruiz,M.

A1 - Calligaro,M.

A1 - Michel,N.

A1 - Krakowski,M.

A1 - Krestnikov,I.

A1 - Livshits,D.

A1 - Cataluna,M. A.

A1 - Rafailov,E. U.

AU - Nikitichev,D. I.

AU - Ding,Y.

AU - Ruiz,M.

AU - Calligaro,M.

AU - Michel,N.

AU - Krakowski,M.

AU - Krestnikov,I.

AU - Livshits,D.

AU - Cataluna,M. A.

AU - Rafailov,E. U.

PY - 2011/6

Y1 - 2011/6

N2 - <p>We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented.</p>

AB - <p>We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented.</p>

KW - SPONTANEOUS EMISSION FACTOR

KW - SEMICONDUCTOR-LASERS

KW - OUTPUT POWER

KW - DIODE-LASERS

U2 - 10.1007/s00340-010-4290-5

DO - 10.1007/s00340-010-4290-5

M1 - Article

JO - Applied Physics B: Lasers and Optics

JF - Applied Physics B: Lasers and Optics

SN - 0946-2171

IS - 3

VL - 103

SP - 609

EP - 613

ER -

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