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InAs/GaAs quantum dots for THz generation

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InAs/GaAs quantum dots for THz generation. / Daghestani, N. S.; Cataluna, M. A.; Berry, G.; Ross, G.; Rose, M. J.

In: Physica Status Solidi C: Current Topics in Solid State Physics, Vol. 9, No. 2, 2012, p. 222-225.

Research output: Contribution to journalArticle

Harvard

Daghestani, NS, Cataluna, MA, Berry, G, Ross, G & Rose, MJ 2012, 'InAs/GaAs quantum dots for THz generation' Physica Status Solidi C: Current Topics in Solid State Physics, vol 9, no. 2, pp. 222-225.

APA

Daghestani, N. S., Cataluna, M. A., Berry, G., Ross, G., & Rose, M. J. (2012). InAs/GaAs quantum dots for THz generation. Physica Status Solidi C: Current Topics in Solid State Physics, 9(2), 222-225doi: 10.1002/pssc.201100253

Vancouver

Daghestani NS, Cataluna MA, Berry G, Ross G, Rose MJ. InAs/GaAs quantum dots for THz generation. Physica Status Solidi C: Current Topics in Solid State Physics. 2012;9(2):222-225.

Author

Daghestani, N. S.; Cataluna, M. A.; Berry, G.; Ross, G.; Rose, M. J. / InAs/GaAs quantum dots for THz generation.

In: Physica Status Solidi C: Current Topics in Solid State Physics, Vol. 9, No. 2, 2012, p. 222-225.

Research output: Contribution to journalArticle

Bibtex - Download

@article{959a950f54d34d7290cae22850145425,
title = "InAs/GaAs quantum dots for THz generation",
author = "Daghestani, {N. S.} and Cataluna, {M. A.} and G. Berry and G. Ross and Rose, {M. J.}",
year = "2012",
volume = "9",
number = "2",
pages = "222--225",
journal = "Physica Status Solidi C: Current Topics in Solid State Physics",
issn = "1862-6351",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - InAs/GaAs quantum dots for THz generation

A1 - Daghestani,N. S.

A1 - Cataluna,M. A.

A1 - Berry,G.

A1 - Ross,G.

A1 - Rose,M. J.

AU - Daghestani,N. S.

AU - Cataluna,M. A.

AU - Berry,G.

AU - Ross,G.

AU - Rose,M. J.

PY - 2012

Y1 - 2012

N2 - <p>We report pulsed terahertz generation from InAs/GaAs quantum-dot based photoconductive devices. For 800 nm optical excitation, the dots act as recombination centres for carriers generated in the GaAs layers. Using photoreflective pump-probe measurements we demonstrate that the photogenerated carrier lifetime decreases when a lateral bias is applied. This can be attributed to an increase in the capture area of the dots when under bias. Two types of antenna metallization were investigated; non-Ohmic, and quasi-Ohmic contacts. Non-Ohmic antennae displayed resilience to Joule heating when operated at a field strength of 46 MV/m. The breakdown field of the devices was 48 MV/m, which is comparable to the breakdown field of bulk GaAs (similar to 50 MV/m). The maximum estimated infrared-to-THz conversion efficiency is similar to 1x10(-5). (C) 2011 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim</p>

AB - <p>We report pulsed terahertz generation from InAs/GaAs quantum-dot based photoconductive devices. For 800 nm optical excitation, the dots act as recombination centres for carriers generated in the GaAs layers. Using photoreflective pump-probe measurements we demonstrate that the photogenerated carrier lifetime decreases when a lateral bias is applied. This can be attributed to an increase in the capture area of the dots when under bias. Two types of antenna metallization were investigated; non-Ohmic, and quasi-Ohmic contacts. Non-Ohmic antennae displayed resilience to Joule heating when operated at a field strength of 46 MV/m. The breakdown field of the devices was 48 MV/m, which is comparable to the breakdown field of bulk GaAs (similar to 50 MV/m). The maximum estimated infrared-to-THz conversion efficiency is similar to 1x10(-5). (C) 2011 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim</p>

U2 - 10.1002/pssc.201100253

DO - 10.1002/pssc.201100253

M1 - Article

JO - Physica Status Solidi C: Current Topics in Solid State Physics

JF - Physica Status Solidi C: Current Topics in Solid State Physics

SN - 1862-6351

IS - 2

VL - 9

SP - 222

EP - 225

ER -

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