Discovery - University of Dundee - Online Publications

Library & Learning Centre

Intensity dependence of quantum efficiency and photo-gating effects in thin film silicon solar cells

Standard

Intensity dependence of quantum efficiency and photo-gating effects in thin film silicon solar cells. / Reynolds, Steve; Main, Charles; Smirnov, Vladimir; Meftah, Amjad.

In: Physica Status Solidi C: Current Topics in Solid State Physics, Vol. 7, No. 3-4, 2010, p. 505-508.

Research output: Contribution to journalArticle

Harvard

Reynolds, S, Main, C, Smirnov, V & Meftah, A 2010, 'Intensity dependence of quantum efficiency and photo-gating effects in thin film silicon solar cells' Physica Status Solidi C: Current Topics in Solid State Physics, vol 7, no. 3-4, pp. 505-508., 10.1002/pssc.200982893

APA

Reynolds, S., Main, C., Smirnov, V., & Meftah, A. (2010). Intensity dependence of quantum efficiency and photo-gating effects in thin film silicon solar cells. Physica Status Solidi C: Current Topics in Solid State Physics, 7(3-4), 505-508. 10.1002/pssc.200982893

Vancouver

Reynolds S, Main C, Smirnov V, Meftah A. Intensity dependence of quantum efficiency and photo-gating effects in thin film silicon solar cells. Physica Status Solidi C: Current Topics in Solid State Physics. 2010;7(3-4):505-508. Available from: 10.1002/pssc.200982893

Author

Reynolds, Steve; Main, Charles; Smirnov, Vladimir; Meftah, Amjad / Intensity dependence of quantum efficiency and photo-gating effects in thin film silicon solar cells.

In: Physica Status Solidi C: Current Topics in Solid State Physics, Vol. 7, No. 3-4, 2010, p. 505-508.

Research output: Contribution to journalArticle

Bibtex - Download

@article{f121b3c5bdeb4d5c8d2339f37cf8b57d,
title = "Intensity dependence of quantum efficiency and photo-gating effects in thin film silicon solar cells",
author = "Steve Reynolds and Charles Main and Vladimir Smirnov and Amjad Meftah",
year = "2010",
doi = "10.1002/pssc.200982893",
volume = "7",
number = "3-4",
pages = "505--508",
journal = "Physica Status Solidi C: Current Topics in Solid State Physics",
issn = "1862-6351",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Intensity dependence of quantum efficiency and photo-gating effects in thin film silicon solar cells

A1 - Reynolds,Steve

A1 - Main,Charles

A1 - Smirnov,Vladimir

A1 - Meftah,Amjad

AU - Reynolds,Steve

AU - Main,Charles

AU - Smirnov,Vladimir

AU - Meftah,Amjad

PY - 2010

Y1 - 2010

N2 - <p>Steady-state photoconductivity measurements have been carried out on thin-film silicon pin structures of i-layer thickness typically 4 mu m, where crystalline composition has been varied by adjustment of the silane concentration in the process gas. In amorphous and low-crystallinity cells, strongly-absorbed light incident from the p-side at photon fluxes in excess of 10(14) cm(-2) s(-1) produces strongly sub-linear intensity dependence, 'S' shaped reverse current-voltage curves and amplification of a second weakly-absorbed beam, termed photogating. These effects are linked to the formation of space charge and attendant low-field region close to the p-i interface, as confirmed by computer simulation. More crystalline devices exhibit little or no such behaviour. At lower intensities of strongly-absorbed light there is a markedly steeper increase in reverse current vs. voltage in low-crystalline when compared to amorphous cells, particularly with light incident from the n-side. This suggests the mobility-lifetime product for holes is much larger in the former case, consistent with the higher hole mobilities reported in time of flight studies. Thus the prospect of composition-dependent changes in mobility as well as defect density should be borne in mind when developing materials for application in microcrystalline silicon solar cells. (C) 2010 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim</p>

AB - <p>Steady-state photoconductivity measurements have been carried out on thin-film silicon pin structures of i-layer thickness typically 4 mu m, where crystalline composition has been varied by adjustment of the silane concentration in the process gas. In amorphous and low-crystallinity cells, strongly-absorbed light incident from the p-side at photon fluxes in excess of 10(14) cm(-2) s(-1) produces strongly sub-linear intensity dependence, 'S' shaped reverse current-voltage curves and amplification of a second weakly-absorbed beam, termed photogating. These effects are linked to the formation of space charge and attendant low-field region close to the p-i interface, as confirmed by computer simulation. More crystalline devices exhibit little or no such behaviour. At lower intensities of strongly-absorbed light there is a markedly steeper increase in reverse current vs. voltage in low-crystalline when compared to amorphous cells, particularly with light incident from the n-side. This suggests the mobility-lifetime product for holes is much larger in the former case, consistent with the higher hole mobilities reported in time of flight studies. Thus the prospect of composition-dependent changes in mobility as well as defect density should be borne in mind when developing materials for application in microcrystalline silicon solar cells. (C) 2010 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim</p>

U2 - 10.1002/pssc.200982893

DO - 10.1002/pssc.200982893

M1 - Article

JO - Physica Status Solidi C: Current Topics in Solid State Physics

JF - Physica Status Solidi C: Current Topics in Solid State Physics

SN - 1862-6351

IS - 3-4

VL - 7

SP - 505

EP - 508

ER -

Documents

Library & Learning Centre

Contact | Accessibility | Policy