P-i-n junction quantum dot saturable absorber mirror : Electrical control of ultrafast dynamics. / Zolotovskaya, S.A.; Butkus, M.; Rafailov, E.U.; Häring, R.; Able, A.; Kaenders, W.; Krestnikov, I.L.; Livshits, D.A.
In: Optics Express, Vol. 20, No. 8, 09.04.2012, p. 9038-9045.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - P-i-n junction quantum dot saturable absorber mirror
T2 - Electrical control of ultrafast dynamics
A1 - Zolotovskaya,S.A.
A1 - Butkus,M.
A1 - Rafailov,E.U.
A1 - Häring,R.
A1 - Able,A.
A1 - Kaenders,W.
A1 - Krestnikov,I.L.
A1 - Livshits,D.A.
AU - Zolotovskaya,S.A.
AU - Butkus,M.
AU - Rafailov,E.U.
AU - Häring,R.
AU - Able,A.
AU - Kaenders,W.
AU - Krestnikov,I.L.
AU - Livshits,D.A.
PY - 2012/4/9
Y1 - 2012/4/9
N2 - We report on nonlinear optical properties of a p-i-n junction quantum dot saturable absorber based on InGaAs/GaAs. Absorption recovery dynamics and nonlinear reflectivity are investigated for different reverse bias and pump power conditions. A decrease in absorption recovery time of nearly two orders of magnitude is demonstrated by applying a voltage between 0 and-20 V. The saturable absorber modulation depth and saturation fluence are found to be independent from the applied reverse bias. © 2012 Optical Society of America.
AB - We report on nonlinear optical properties of a p-i-n junction quantum dot saturable absorber based on InGaAs/GaAs. Absorption recovery dynamics and nonlinear reflectivity are investigated for different reverse bias and pump power conditions. A decrease in absorption recovery time of nearly two orders of magnitude is demonstrated by applying a voltage between 0 and-20 V. The saturable absorber modulation depth and saturation fluence are found to be independent from the applied reverse bias. © 2012 Optical Society of America.
U2 - 10.1364/OE.20.009038
DO - 10.1364/OE.20.009038
M1 - Article
JO - Optics Express
JF - Optics Express
SN - 1094-4087
IS - 8
VL - 20
SP - 9038
EP - 9045
ER -