Properties of thin-film silicon solar cells at very high irradiance

TY - JOUR

T1 - Properties of thin-film silicon solar cells at very high irradiance

A1 - Reynolds,Stephen

A1 - Anand,Suman

A1 - Meftah,Amjad

A1 - Smirnov,Vladimir

AU - Reynolds,Stephen

AU - Anand,Suman

AU - Meftah,Amjad

AU - Smirnov,Vladimir

PY - 2012

Y1 - 2012

N2 - The focussed beam of a low-power helium–neon laser is used to study accelerated light-induced degradation (Staebler–Wronski effect) and high steady-state photocarrier generation rates in amorphous and microcrystalline silicon thin-film solar cells, at up to 13 MW m- 2 irradiance. Even at these high power densities, COMSOL® simulations indicate that heat diffusion into the substrate, aided by spreading conduction via the Ag back-contact, restricts the temperature rise to less than 14 °C. Short-circuit current may be measured directly, and the I–V characteristic estimated by taking into account shunting by the inactive part of the cell. The improved resistance to degradation of microcrystalline silicon cells is shown to persist to high irradiance. Computer simulations of an amorphous silicon solar cell are presented that are consistent with measured un-degraded and degraded properties, and offer insight into prevailing defect creation processes and carrier recombination mechanisms.

AB - The focussed beam of a low-power helium–neon laser is used to study accelerated light-induced degradation (Staebler–Wronski effect) and high steady-state photocarrier generation rates in amorphous and microcrystalline silicon thin-film solar cells, at up to 13 MW m- 2 irradiance. Even at these high power densities, COMSOL® simulations indicate that heat diffusion into the substrate, aided by spreading conduction via the Ag back-contact, restricts the temperature rise to less than 14 °C. Short-circuit current may be measured directly, and the I–V characteristic estimated by taking into account shunting by the inactive part of the cell. The improved resistance to degradation of microcrystalline silicon cells is shown to persist to high irradiance. Computer simulations of an amorphous silicon solar cell are presented that are consistent with measured un-degraded and degraded properties, and offer insight into prevailing defect creation processes and carrier recombination mechanisms.

KW - Amorphous silicon

KW - Microcrystalline silicon

KW - Solar cells

KW - Staebler–Wronski effect

KW - Computer modelling

U2 - 10.1016/j.jnoncrysol.2011.12.065

DO - 10.1016/j.jnoncrysol.2011.12.065

M1 - Article

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

IS - 17

VL - 358

SP - 2202

EP - 2205

ER -