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Quantum well saturable absorber mirror with electrical control of modulation depth

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Quantum well saturable absorber mirror with electrical control of modulation depth. / Liu, Xiaomin; Rafailov, Edik U.; Livshits, Daniil; Turchinovich, Dmitry.

In: Applied Physics Letters, Vol. 97, No. 5, 051103, 02.08.2010, p. -.

Research output: Contribution to journalArticle

Harvard

Liu, X, Rafailov, EU, Livshits, D & Turchinovich, D 2010, 'Quantum well saturable absorber mirror with electrical control of modulation depth' Applied Physics Letters, vol 97, no. 5, 051103, pp. -.

APA

Liu, X., Rafailov, E. U., Livshits, D., & Turchinovich, D. (2010). Quantum well saturable absorber mirror with electrical control of modulation depth. Applied Physics Letters, 97(5), -[051103]doi: 10.1063/1.3474799

Vancouver

Liu X, Rafailov EU, Livshits D, Turchinovich D. Quantum well saturable absorber mirror with electrical control of modulation depth. Applied Physics Letters. 2010 Aug 2;97(5):-. 051103.

Author

Liu, Xiaomin; Rafailov, Edik U.; Livshits, Daniil; Turchinovich, Dmitry / Quantum well saturable absorber mirror with electrical control of modulation depth.

In: Applied Physics Letters, Vol. 97, No. 5, 051103, 02.08.2010, p. -.

Research output: Contribution to journalArticle

Bibtex - Download

@article{c52f8f310954429f8ed497b0255cac78,
title = "Quantum well saturable absorber mirror with electrical control of modulation depth",
author = "Xiaomin Liu and Rafailov, {Edik U.} and Daniil Livshits and Dmitry Turchinovich",
year = "2010",
volume = "97",
number = "5",
pages = "--",
journal = "Applied Physics Letters",
issn = "0003-6951",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Quantum well saturable absorber mirror with electrical control of modulation depth

A1 - Liu,Xiaomin

A1 - Rafailov,Edik U.

A1 - Livshits,Daniil

A1 - Turchinovich,Dmitry

AU - Liu,Xiaomin

AU - Rafailov,Edik U.

AU - Livshits,Daniil

AU - Turchinovich,Dmitry

PY - 2010/8/2

Y1 - 2010/8/2

N2 - <p>We demonstrate a quantum well (QW) semiconductor saturable absorber mirror (SESAM) comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0-2 V to the p-i-n structure, we were able to change the SESAM modulation depth in the range 2.5-0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6-26.7 mu J/cm(2). This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect in the QWs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3474799]</p>

AB - <p>We demonstrate a quantum well (QW) semiconductor saturable absorber mirror (SESAM) comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0-2 V to the p-i-n structure, we were able to change the SESAM modulation depth in the range 2.5-0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6-26.7 mu J/cm(2). This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect in the QWs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3474799]</p>

KW - SOLID-STATE LASERS

KW - FIBER

KW - TI

U2 - 10.1063/1.3474799

DO - 10.1063/1.3474799

M1 - Article

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

VL - 97

SP - -

ER -

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