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Semiconductor monolithic mode-locked laser for ultrashort pulse generation at 750 nm

Semiconductor monolithic mode-locked laser for ultrashort pulse generation at 750 nm

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Authors

  • L. Kong
  • H. L. Wang
  • D. Bajek
  • S. E. Haggett
  • A. F. Forrest
  • X. L. Wang
  • B. F. Cui
  • J. Q. Pan
  • A. Y. Ding
  • M. A. Cataluna

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Info

Original languageEnglish
Title of host publicationConference Digest - IEEE International Semiconductor Laser Conference
PublisherInstitute of Electrical and Electronics Engineers
Pages137-138
Number of pages2
ISBN (Print)9781479957217
DOIs
StatePublished - 16 Dec 2014
Event2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 - Palma de Mallorca, Spain

Conference

Conference2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014
CountrySpain
CityPalma de Mallorca
Period7/09/1410/09/14

Abstract

A novel passively mode-locked semiconductor edge-emitting laser is reported, based on an AlGaAs multi-quantum-well structure. Ultra short pulses are generated at 752 nm, with a 19.4-GHz repetition rate and a pulse duration of 3.5 ps.

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