Suppression of vacancy defects in epitaxial La-doped SrTiO3 films. / Keeble, D. J. ; Jalan, B.; Ravelli, L.; Egger, W.; Kanda, G.; Stemmer, S.
In: Applied Physics Letters, Vol. 99, No. 23, 05.12.2011, p. -, 232905.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Suppression of vacancy defects in epitaxial La-doped SrTiO3 films
A1 - Keeble,D. J.
A1 - Jalan,B.
A1 - Ravelli,L.
A1 - Egger,W.
A1 - Kanda,G.
A1 - Stemmer,S.
AU - Keeble,D. J.
AU - Jalan,B.
AU - Ravelli,L.
AU - Egger,W.
AU - Kanda,G.
AU - Stemmer,S.
PY - 2011/12/5
Y1 - 2011/12/5
N2 - <p>Variable energy positron annihilation lifetime spectroscopy of high-mobility La-doped SrTiO3 grown by molecular beam epitaxy found that the films contained sufficiently low concentrations of Sr vacancies and vacancy cluster defects to allow the observation of positron annihilation events from the perfect lattice. This enabled the concentrations of charged cation vacancies to be estimated, and these were found to be at least an order of magnitude below the La-dopant concentrations. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664398]</p>
AB - <p>Variable energy positron annihilation lifetime spectroscopy of high-mobility La-doped SrTiO3 grown by molecular beam epitaxy found that the films contained sufficiently low concentrations of Sr vacancies and vacancy cluster defects to allow the observation of positron annihilation events from the perfect lattice. This enabled the concentrations of charged cation vacancies to be estimated, and these were found to be at least an order of magnitude below the La-dopant concentrations. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664398]</p>
KW - POSITRON TRAPPING RATES
KW - SILICON
U2 - 10.1063/1.3664398
DO - 10.1063/1.3664398
M1 - Article
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 23
VL - 99
SP - -
ER -