Discovery - University of Dundee - Online Publications

Library & Learning Centre

Suppression of vacancy defects in epitaxial La-doped SrTiO3 films

Standard

Suppression of vacancy defects in epitaxial La-doped SrTiO3 films. / Keeble, D. J. ; Jalan, B.; Ravelli, L.; Egger, W.; Kanda, G.; Stemmer, S.

In: Applied Physics Letters, Vol. 99, No. 23, 232905, 05.12.2011, p. -.

Research output: Contribution to journalArticle

Harvard

Keeble, DJ, Jalan, B, Ravelli, L, Egger, W, Kanda, G & Stemmer, S 2011, 'Suppression of vacancy defects in epitaxial La-doped SrTiO3 films' Applied Physics Letters, vol 99, no. 23, 232905, pp. -., 10.1063/1.3664398

APA

Keeble, D. J., Jalan, B., Ravelli, L., Egger, W., Kanda, G., & Stemmer, S. (2011). Suppression of vacancy defects in epitaxial La-doped SrTiO3 films. Applied Physics Letters, 99(23), -. [232905]. 10.1063/1.3664398

Vancouver

Keeble DJ, Jalan B, Ravelli L, Egger W, Kanda G, Stemmer S. Suppression of vacancy defects in epitaxial La-doped SrTiO3 films. Applied Physics Letters. 2011 Dec 5;99(23):-. 232905. Available from: 10.1063/1.3664398

Author

Keeble, D. J. ; Jalan, B.; Ravelli, L.; Egger, W.; Kanda, G.; Stemmer, S. / Suppression of vacancy defects in epitaxial La-doped SrTiO3 films.

In: Applied Physics Letters, Vol. 99, No. 23, 232905, 05.12.2011, p. -.

Research output: Contribution to journalArticle

Bibtex - Download

@article{2ba776372ec145ae9492e7602d7b022c,
title = "Suppression of vacancy defects in epitaxial La-doped SrTiO3 films",
keywords = "POSITRON TRAPPING RATES, SILICON",
author = "Keeble, {D. J.} and B. Jalan and L. Ravelli and W. Egger and G. Kanda and S. Stemmer",
year = "2011",
doi = "10.1063/1.3664398",
volume = "99",
number = "23",
pages = "--",
journal = "Applied Physics Letters",
issn = "0003-6951",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Suppression of vacancy defects in epitaxial La-doped SrTiO3 films

A1 - Keeble,D. J.

A1 - Jalan,B.

A1 - Ravelli,L.

A1 - Egger,W.

A1 - Kanda,G.

A1 - Stemmer,S.

AU - Keeble,D. J.

AU - Jalan,B.

AU - Ravelli,L.

AU - Egger,W.

AU - Kanda,G.

AU - Stemmer,S.

PY - 2011/12/5

Y1 - 2011/12/5

N2 - <p>Variable energy positron annihilation lifetime spectroscopy of high-mobility La-doped SrTiO3 grown by molecular beam epitaxy found that the films contained sufficiently low concentrations of Sr vacancies and vacancy cluster defects to allow the observation of positron annihilation events from the perfect lattice. This enabled the concentrations of charged cation vacancies to be estimated, and these were found to be at least an order of magnitude below the La-dopant concentrations. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664398]</p>

AB - <p>Variable energy positron annihilation lifetime spectroscopy of high-mobility La-doped SrTiO3 grown by molecular beam epitaxy found that the films contained sufficiently low concentrations of Sr vacancies and vacancy cluster defects to allow the observation of positron annihilation events from the perfect lattice. This enabled the concentrations of charged cation vacancies to be estimated, and these were found to be at least an order of magnitude below the La-dopant concentrations. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664398]</p>

KW - POSITRON TRAPPING RATES

KW - SILICON

U2 - 10.1063/1.3664398

DO - 10.1063/1.3664398

M1 - Article

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

VL - 99

SP - -

ER -

Documents

Library & Learning Centre

Contact | Accessibility | Policy