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Temperature dependence of electroabsorption dynamics in an InAs quantum-dot saturable absorber at 1.3 mu m and its impact on mode-locked quantum-dot lasers

Temperature dependence of electroabsorption dynamics in an InAs quantum-dot saturable absorber at 1.3 mu m and its impact on mode-locked quantum-dot lasers

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Authors

  • M. A. Cataluna
  • D. B. Malins
  • A. Gomez-Iglesias
  • W. Sibbett
  • A. Miller
  • E. U. Rafailov

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Original languageEnglish
Article number121110
Pages-
Number of pages3
JournalApplied Physics Letters
Journal publication date20 Sep 2010
Volume97
Issue12
DOIs
StatePublished

Abstract

We report temperature-dependent absorption recovery times in an InAs p-i-n ridge waveguide quantum-dot modulator under low reverse bias, investigated via subpicosecond pump-probe measurements. The measured decrease in absorption recovery time with increasing temperature (293-319 K) is in excellent agreement with a thermionic emission model. A similar trend in pulse duration with increasing temperature is also observed from a two-section mode-locked quantum-dot laser fabricated from a similar epitaxial structure. These measurements confirm the key role of the absorber recovery time in the reduction in the pulses generated by two-section mode-locked quantum-dot lasers, both at room and elevated temperatures. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489104]

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