Temperature dependence of electroabsorption dynamics in an InAs quantum-dot saturable absorber at 1.3 mu m and its impact on mode-locked quantum-dot lasers. / Cataluna, M. A. ; Malins, D. B.; Gomez-Iglesias, A.; Sibbett, W.; Miller, A.; Rafailov, E. U. .
In: Applied Physics Letters, Vol. 97, No. 12, 20.09.2010, p. -, 121110.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Temperature dependence of electroabsorption dynamics in an InAs quantum-dot saturable absorber at 1.3 mu m and its impact on mode-locked quantum-dot lasers
A1 - Cataluna,M. A.
A1 - Malins,D. B.
A1 - Gomez-Iglesias,A.
A1 - Sibbett,W.
A1 - Miller,A.
A1 - Rafailov,E. U.
AU - Cataluna,M. A.
AU - Malins,D. B.
AU - Gomez-Iglesias,A.
AU - Sibbett,W.
AU - Miller,A.
AU - Rafailov,E. U.
PY - 2010/9/20
Y1 - 2010/9/20
N2 - <p>We report temperature-dependent absorption recovery times in an InAs p-i-n ridge waveguide quantum-dot modulator under low reverse bias, investigated via subpicosecond pump-probe measurements. The measured decrease in absorption recovery time with increasing temperature (293-319 K) is in excellent agreement with a thermionic emission model. A similar trend in pulse duration with increasing temperature is also observed from a two-section mode-locked quantum-dot laser fabricated from a similar epitaxial structure. These measurements confirm the key role of the absorber recovery time in the reduction in the pulses generated by two-section mode-locked quantum-dot lasers, both at room and elevated temperatures. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489104]</p>
AB - <p>We report temperature-dependent absorption recovery times in an InAs p-i-n ridge waveguide quantum-dot modulator under low reverse bias, investigated via subpicosecond pump-probe measurements. The measured decrease in absorption recovery time with increasing temperature (293-319 K) is in excellent agreement with a thermionic emission model. A similar trend in pulse duration with increasing temperature is also observed from a two-section mode-locked quantum-dot laser fabricated from a similar epitaxial structure. These measurements confirm the key role of the absorber recovery time in the reduction in the pulses generated by two-section mode-locked quantum-dot lasers, both at room and elevated temperatures. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489104]</p>
KW - AMPLIFIERS
KW - EMISSION
U2 - 10.1063/1.3489104
DO - 10.1063/1.3489104
M1 - Article
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 12
VL - 97
SP - -
ER -