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Terahertz electro-absorption effect enabling femtosecond all-optical switching in semiconductor quantum dots

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Terahertz electro-absorption effect enabling femtosecond all-optical switching in semiconductor quantum dots. / Hoffmann, M. C.; Monozon, B. S.; Livshits, D.; Rafailov, E. U.; Turchinovich, D.

In: Applied Physics Letters, Vol. 97, No. 23, 231108, 06.12.2010, p. -.

Research output: Contribution to journalArticle

Harvard

Hoffmann, MC, Monozon, BS, Livshits, D, Rafailov, EU & Turchinovich, D 2010, 'Terahertz electro-absorption effect enabling femtosecond all-optical switching in semiconductor quantum dots' Applied Physics Letters, vol 97, no. 23, 231108, pp. -.

APA

Hoffmann, M. C., Monozon, B. S., Livshits, D., Rafailov, E. U., & Turchinovich, D. (2010). Terahertz electro-absorption effect enabling femtosecond all-optical switching in semiconductor quantum dots. Applied Physics Letters, 97(23), -[231108]doi: 10.1063/1.3515909

Vancouver

Hoffmann MC, Monozon BS, Livshits D, Rafailov EU, Turchinovich D. Terahertz electro-absorption effect enabling femtosecond all-optical switching in semiconductor quantum dots. Applied Physics Letters. 2010 Dec 6;97(23):-. 231108.

Author

Hoffmann, M. C.; Monozon, B. S.; Livshits, D.; Rafailov, E. U.; Turchinovich, D. / Terahertz electro-absorption effect enabling femtosecond all-optical switching in semiconductor quantum dots.

In: Applied Physics Letters, Vol. 97, No. 23, 231108, 06.12.2010, p. -.

Research output: Contribution to journalArticle

Bibtex - Download

@article{329073935ad142e38257bd1c6ca09222,
title = "Terahertz electro-absorption effect enabling femtosecond all-optical switching in semiconductor quantum dots",
author = "Hoffmann, {M. C.} and Monozon, {B. S.} and D. Livshits and Rafailov, {E. U.} and D. Turchinovich",
year = "2010",
volume = "97",
number = "23",
pages = "--",
journal = "Applied Physics Letters",
issn = "0003-6951",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Terahertz electro-absorption effect enabling femtosecond all-optical switching in semiconductor quantum dots

A1 - Hoffmann,M. C.

A1 - Monozon,B. S.

A1 - Livshits,D.

A1 - Rafailov,E. U.

A1 - Turchinovich,D.

AU - Hoffmann,M. C.

AU - Monozon,B. S.

AU - Livshits,D.

AU - Rafailov,E. U.

AU - Turchinovich,D.

PY - 2010/12/6

Y1 - 2010/12/6

N2 - <p>We demonstrate an instantaneous all-optical manipulation of optical absorption in InGaAs/GaAs quantum dots (QDs) via an electro-absorption effect induced by the electric field of an incident free-space terahertz signal. A terahertz signal with the full bandwidth of 3 THz was directly encoded onto an optical signal probing the absorption in QDs, resulting in the encoded temporal features as fast as 460 fs. The instantaneous nature of this effect enables femtosecond all-optical switching at very high repetition rates, suggesting applications in terahertz-range wireless communication systems with data rates of at least 0.5 Tbit/s. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3515909]</p>

AB - <p>We demonstrate an instantaneous all-optical manipulation of optical absorption in InGaAs/GaAs quantum dots (QDs) via an electro-absorption effect induced by the electric field of an incident free-space terahertz signal. A terahertz signal with the full bandwidth of 3 THz was directly encoded onto an optical signal probing the absorption in QDs, resulting in the encoded temporal features as fast as 460 fs. The instantaneous nature of this effect enables femtosecond all-optical switching at very high repetition rates, suggesting applications in terahertz-range wireless communication systems with data rates of at least 0.5 Tbit/s. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3515909]</p>

U2 - 10.1063/1.3515909

DO - 10.1063/1.3515909

M1 - Article

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

VL - 97

SP - -

ER -

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