Discovery - University of Dundee - Online Publications

Library & Learning Centre

Terahertz emission from InAs/GaAs quantum dot based photoconductive devices

Terahertz emission from InAs/GaAs quantum dot based photoconductive devices

Research output: Contribution to journalArticle

View graph of relations

Authors

Research units

Info

Original languageEnglish
Article number181107
JournalApplied Physics Letters
Journal publication date2 May 2011
Volume98
Issue18
DOIs
StatePublished

Abstract

We report terahertz (THz) generation from InAs/GaAs quantum-dot based photoconductive antennae with femtosecond optical excitation at 800 nm, with an estimated infrared-to-THz conversion efficiency of ~0.9× 10-5. The quantum dots act as recombination centers for carriers generated in the GaAs layers within the structure. Photoreflective pump-probe measurements reveal a decrease in the carrier lifetime when a lateral voltage is applied. These antennae displayed resilience to Joule heating when operated at a field strength of 46 MV/m. The breakdown field of the devices was 48 MV/m, which is comparable to the breakdown field of bulk GaAs. © 2011 American Institute of Physics.

Documents

Library & Learning Centre

Contact | Accessibility | Policy