TY  - JOUR
T1  - Terahertz emission from InAs/GaAs quantum dot based photoconductive devices
A1  - Daghestani,N.S.
A1  - Cataluna,M.A.
A1  - Berry,G.
A1  - Ross,G.
A1  - Rose,M.J.
AU  - Daghestani,N.S.
AU  - Cataluna,M.A.
AU  - Berry,G.
AU  - Ross,G.
AU  - Rose,M.J.
PY  - 2011/5/2
Y1  - 2011/5/2
N2  - We report terahertz (THz) generation from InAs/GaAs quantum-dot based photoconductive antennae with femtosecond optical excitation at 800 nm, with an estimated infrared-to-THz conversion efficiency of ~0.9× 10-5. The quantum dots act as recombination centers for carriers generated in the GaAs layers within the structure. Photoreflective pump-probe measurements reveal a decrease in the carrier lifetime when a lateral voltage is applied. These antennae displayed resilience to Joule heating when operated at a field strength of 46 MV/m. The breakdown field of the devices was 48 MV/m, which is comparable to the breakdown field of bulk GaAs. © 2011 American Institute of Physics.
AB  - We report terahertz (THz) generation from InAs/GaAs quantum-dot based photoconductive antennae with femtosecond optical excitation at 800 nm, with an estimated infrared-to-THz conversion efficiency of ~0.9× 10-5. The quantum dots act as recombination centers for carriers generated in the GaAs layers within the structure. Photoreflective pump-probe measurements reveal a decrease in the carrier lifetime when a lateral voltage is applied. These antennae displayed resilience to Joule heating when operated at a field strength of 46 MV/m. The breakdown field of the devices was 48 MV/m, which is comparable to the breakdown field of bulk GaAs. © 2011 American Institute of Physics.
KW  - SPECTROSCOPY
KW  - RADIATION
UR  - http://www.scopus.com/inward/record.url?partnerID=yv4JPVwI&eid=2-s2.0-79957487192&md5=a4402ecfa86d051e31732347d5eb6430
U2  - 10.1063/1.3586774
DO  - 10.1063/1.3586774
M1  - Article
JO  - Applied Physics Letters
JF  - Applied Physics Letters
SN  - 0003-6951
IS  - 18
VL  - 98
ER  -