Terahertz emission from InAs/GaAs quantum dot based photoconductive devices. / Daghestani, N.S.; Cataluna, M.A.; Berry, G.; Ross, G.; Rose, M.J.
In: Applied Physics Letters, Vol. 98, No. 18, 02.05.2011, 181107.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Terahertz emission from InAs/GaAs quantum dot based photoconductive devices
A1 - Daghestani,N.S.
A1 - Cataluna,M.A.
A1 - Berry,G.
A1 - Ross,G.
A1 - Rose,M.J.
AU - Daghestani,N.S.
AU - Cataluna,M.A.
AU - Berry,G.
AU - Ross,G.
AU - Rose,M.J.
PY - 2011/5/2
Y1 - 2011/5/2
N2 - We report terahertz (THz) generation from InAs/GaAs quantum-dot based photoconductive antennae with femtosecond optical excitation at 800 nm, with an estimated infrared-to-THz conversion efficiency of ~0.9× 10-5. The quantum dots act as recombination centers for carriers generated in the GaAs layers within the structure. Photoreflective pump-probe measurements reveal a decrease in the carrier lifetime when a lateral voltage is applied. These antennae displayed resilience to Joule heating when operated at a field strength of 46 MV/m. The breakdown field of the devices was 48 MV/m, which is comparable to the breakdown field of bulk GaAs. © 2011 American Institute of Physics.
AB - We report terahertz (THz) generation from InAs/GaAs quantum-dot based photoconductive antennae with femtosecond optical excitation at 800 nm, with an estimated infrared-to-THz conversion efficiency of ~0.9× 10-5. The quantum dots act as recombination centers for carriers generated in the GaAs layers within the structure. Photoreflective pump-probe measurements reveal a decrease in the carrier lifetime when a lateral voltage is applied. These antennae displayed resilience to Joule heating when operated at a field strength of 46 MV/m. The breakdown field of the devices was 48 MV/m, which is comparable to the breakdown field of bulk GaAs. © 2011 American Institute of Physics.
KW - SPECTROSCOPY
KW - RADIATION
UR - http://www.scopus.com/inward/record.url?partnerID=yv4JPVwI&eid=2-s2.0-79957487192&md5=a4402ecfa86d051e31732347d5eb6430
U2 - 10.1063/1.3586774
DO - 10.1063/1.3586774
M1 - Article
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 18
VL - 98
ER -