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Terahertz emission from InAs/GaAs quantum dot based photoconductive devices

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Terahertz emission from InAs/GaAs quantum dot based photoconductive devices. / Daghestani, N.S.; Cataluna, M.A.; Berry, G.; Ross, G.; Rose, M.J.

In: Applied Physics Letters, Vol. 98, No. 18, 181107, 02.05.2011.

Research output: Contribution to journalArticle

Harvard

Daghestani, NS, Cataluna, MA, Berry, G, Ross, G & Rose, MJ 2011, 'Terahertz emission from InAs/GaAs quantum dot based photoconductive devices' Applied Physics Letters, vol 98, no. 18, 181107., 10.1063/1.3586774

APA

Daghestani, N. S., Cataluna, M. A., Berry, G., Ross, G., & Rose, M. J. (2011). Terahertz emission from InAs/GaAs quantum dot based photoconductive devices. Applied Physics Letters, 98(18), [181107]. 10.1063/1.3586774

Vancouver

Daghestani NS, Cataluna MA, Berry G, Ross G, Rose MJ. Terahertz emission from InAs/GaAs quantum dot based photoconductive devices. Applied Physics Letters. 2011 May 2;98(18). 181107. Available from: 10.1063/1.3586774

Author

Daghestani, N.S.; Cataluna, M.A.; Berry, G.; Ross, G.; Rose, M.J. / Terahertz emission from InAs/GaAs quantum dot based photoconductive devices.

In: Applied Physics Letters, Vol. 98, No. 18, 181107, 02.05.2011.

Research output: Contribution to journalArticle

Bibtex - Download

@article{69c8eba5fc2c4f0f874c65611d518f1a,
title = "Terahertz emission from InAs/GaAs quantum dot based photoconductive devices",
keywords = "SPECTROSCOPY, RADIATION",
author = "N.S. Daghestani and M.A. Cataluna and G. Berry and G. Ross and M.J. Rose",
year = "2011",
doi = "10.1063/1.3586774",
volume = "98",
number = "18",
journal = "Applied Physics Letters",
issn = "0003-6951",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Terahertz emission from InAs/GaAs quantum dot based photoconductive devices

A1 - Daghestani,N.S.

A1 - Cataluna,M.A.

A1 - Berry,G.

A1 - Ross,G.

A1 - Rose,M.J.

AU - Daghestani,N.S.

AU - Cataluna,M.A.

AU - Berry,G.

AU - Ross,G.

AU - Rose,M.J.

PY - 2011/5/2

Y1 - 2011/5/2

N2 - We report terahertz (THz) generation from InAs/GaAs quantum-dot based photoconductive antennae with femtosecond optical excitation at 800 nm, with an estimated infrared-to-THz conversion efficiency of ~0.9× 10-5. The quantum dots act as recombination centers for carriers generated in the GaAs layers within the structure. Photoreflective pump-probe measurements reveal a decrease in the carrier lifetime when a lateral voltage is applied. These antennae displayed resilience to Joule heating when operated at a field strength of 46 MV/m. The breakdown field of the devices was 48 MV/m, which is comparable to the breakdown field of bulk GaAs. © 2011 American Institute of Physics.

AB - We report terahertz (THz) generation from InAs/GaAs quantum-dot based photoconductive antennae with femtosecond optical excitation at 800 nm, with an estimated infrared-to-THz conversion efficiency of ~0.9× 10-5. The quantum dots act as recombination centers for carriers generated in the GaAs layers within the structure. Photoreflective pump-probe measurements reveal a decrease in the carrier lifetime when a lateral voltage is applied. These antennae displayed resilience to Joule heating when operated at a field strength of 46 MV/m. The breakdown field of the devices was 48 MV/m, which is comparable to the breakdown field of bulk GaAs. © 2011 American Institute of Physics.

KW - SPECTROSCOPY

KW - RADIATION

UR - http://www.scopus.com/inward/record.url?scp=79957487192&partnerID=8YFLogxK

U2 - 10.1063/1.3586774

DO - 10.1063/1.3586774

M1 - Article

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

VL - 98

ER -

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