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THz generation from a nanocrystalline silicon-based photoconductive device

THz generation from a nanocrystalline silicon-based photoconductive device

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Original languageEnglish
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Pages-
Number of pages5
JournalSemiconductor Science and Technology
Journal publication date7 Jul 2011
Journal number7
Volume26
DOIs
StatePublished

Abstract

Terahertz generation has been achieved from a photoconductive switch based on hydrogenated nanocrystalline silicon (nc-Si:H), gated by a femtosecond laser. The nc-Si:H samples were produced by a hot wire chemical vapour deposition process, a process with low production costs owing to its higher growth rate and manufacturing simplicity. Although promising ultrafast carrier dynamics of nc-Si have been previously demonstrated, this is the first report on THz generation from a nc-Si:H material.

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