THz generation from a nanocrystalline silicon-based photoconductive device. / Daghestani, N. S. ; Persheyev, S.; Cataluna, M. A. ; Ross, G.; Rose, M. J. .
In: Semiconductor Science and Technology, Vol. 26, No. 7, 07.07.2011, p. -, 075015.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - THz generation from a nanocrystalline silicon-based photoconductive device
A1 - Daghestani,N. S.
A1 - Persheyev,S.
A1 - Cataluna,M. A.
A1 - Ross,G.
A1 - Rose,M. J.
AU - Daghestani,N. S.
AU - Persheyev,S.
AU - Cataluna,M. A.
AU - Ross,G.
AU - Rose,M. J.
PY - 2011/7/7
Y1 - 2011/7/7
N2 - <p>Terahertz generation has been achieved from a photoconductive switch based on hydrogenated nanocrystalline silicon (nc-Si:H), gated by a femtosecond laser. The nc-Si:H samples were produced by a hot wire chemical vapour deposition process, a process with low production costs owing to its higher growth rate and manufacturing simplicity. Although promising ultrafast carrier dynamics of nc-Si have been previously demonstrated, this is the first report on THz generation from a nc-Si:H material.</p>
AB - <p>Terahertz generation has been achieved from a photoconductive switch based on hydrogenated nanocrystalline silicon (nc-Si:H), gated by a femtosecond laser. The nc-Si:H samples were produced by a hot wire chemical vapour deposition process, a process with low production costs owing to its higher growth rate and manufacturing simplicity. Although promising ultrafast carrier dynamics of nc-Si have been previously demonstrated, this is the first report on THz generation from a nc-Si:H material.</p>
KW - SEMIINSULATING GAAS
KW - FILMS
KW - DEPOSITION
KW - HWCVD
KW - PECVD
KW - CVD
U2 - 10.1088/0268-1242/26/7/075015
DO - 10.1088/0268-1242/26/7/075015
M1 - Article
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 7
VL - 26
SP - -
ER -