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THz generation from a nanocrystalline silicon-based photoconductive device

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THz generation from a nanocrystalline silicon-based photoconductive device. / Daghestani, N. S. ; Persheyev, S.; Cataluna, M. A. ; Ross, G.; Rose, M. J. .

In: Semiconductor Science and Technology, Vol. 26, No. 7, 075015, 07.07.2011, p. -.

Research output: Contribution to journalArticle

Harvard

Daghestani, NS, Persheyev, S, Cataluna, MA, Ross, G & Rose, MJ 2011, 'THz generation from a nanocrystalline silicon-based photoconductive device' Semiconductor Science and Technology, vol 26, no. 7, 075015, pp. -.

APA

Daghestani, N. S., Persheyev, S., Cataluna, M. A., Ross, G., & Rose, M. J. (2011). THz generation from a nanocrystalline silicon-based photoconductive device. Semiconductor Science and Technology, 26(7), -[075015]doi: 10.1088/0268-1242/26/7/075015

Vancouver

Daghestani NS, Persheyev S, Cataluna MA, Ross G, Rose MJ. THz generation from a nanocrystalline silicon-based photoconductive device. Semiconductor Science and Technology. 2011 Jul 7;26(7):-. 075015.

Author

Daghestani, N. S. ; Persheyev, S.; Cataluna, M. A. ; Ross, G.; Rose, M. J. / THz generation from a nanocrystalline silicon-based photoconductive device.

In: Semiconductor Science and Technology, Vol. 26, No. 7, 075015, 07.07.2011, p. -.

Research output: Contribution to journalArticle

Bibtex - Download

@article{cfe0370765994e8aa1bce07d7fc0d783,
title = "THz generation from a nanocrystalline silicon-based photoconductive device",
author = "Daghestani, {N. S.} and S. Persheyev and Cataluna, {M. A.} and G. Ross and Rose, {M. J.}",
year = "2011",
volume = "26",
number = "7",
pages = "--",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - THz generation from a nanocrystalline silicon-based photoconductive device

A1 - Daghestani,N. S.

A1 - Persheyev,S.

A1 - Cataluna,M. A.

A1 - Ross,G.

A1 - Rose,M. J.

AU - Daghestani,N. S.

AU - Persheyev,S.

AU - Cataluna,M. A.

AU - Ross,G.

AU - Rose,M. J.

PY - 2011/7/7

Y1 - 2011/7/7

N2 - <p>Terahertz generation has been achieved from a photoconductive switch based on hydrogenated nanocrystalline silicon (nc-Si:H), gated by a femtosecond laser. The nc-Si:H samples were produced by a hot wire chemical vapour deposition process, a process with low production costs owing to its higher growth rate and manufacturing simplicity. Although promising ultrafast carrier dynamics of nc-Si have been previously demonstrated, this is the first report on THz generation from a nc-Si:H material.</p>

AB - <p>Terahertz generation has been achieved from a photoconductive switch based on hydrogenated nanocrystalline silicon (nc-Si:H), gated by a femtosecond laser. The nc-Si:H samples were produced by a hot wire chemical vapour deposition process, a process with low production costs owing to its higher growth rate and manufacturing simplicity. Although promising ultrafast carrier dynamics of nc-Si have been previously demonstrated, this is the first report on THz generation from a nc-Si:H material.</p>

KW - SEMIINSULATING GAAS

KW - FILMS

KW - DEPOSITION

KW - HWCVD

KW - PECVD

KW - CVD

U2 - 10.1088/0268-1242/26/7/075015

DO - 10.1088/0268-1242/26/7/075015

M1 - Article

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 7

VL - 26

SP - -

ER -

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