Transient photoconductivity studies of band tails states in compensated a-Si:H

TY - JOUR

T1 - Transient photoconductivity studies of band tails states in compensated a-Si:H

A1 - Goldie,D. M.

AU - Goldie,D. M.

PY - 2006

Y1 - 2006

N2 - The density of conduction band tail states has been determined for a series of compensated a-Si:H films using transient photoconductivity measurements. Relative to undoped material, the energy width of shallow tail states lying within 0.45 eV of the conduction band edge are found to be insensitive to the level of compensated doping for doping levels up to 1000 vppm. An observed reduction in photocurrent magnitude as the doping is increased is consistent with a corresponding reduction in the electron extended state mobility. The magnitude of the mobility reduction is found to be quantitatively consistent with potential fluctuations which arise from ionized dopants for compensated doping levels up to about 100 vppm.

AB - The density of conduction band tail states has been determined for a series of compensated a-Si:H films using transient photoconductivity measurements. Relative to undoped material, the energy width of shallow tail states lying within 0.45 eV of the conduction band edge are found to be insensitive to the level of compensated doping for doping levels up to 1000 vppm. An observed reduction in photocurrent magnitude as the doping is increased is consistent with a corresponding reduction in the electron extended state mobility. The magnitude of the mobility reduction is found to be quantitatively consistent with potential fluctuations which arise from ionized dopants for compensated doping levels up to about 100 vppm.

KW - Silicon

U2 - 10.1016/j.jnoncrysol.2006.10.001

DO - 10.1016/j.jnoncrysol.2006.10.001

M1 - Article

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

IS - 2

VL - 353

SP - 130

EP - 135

ER -