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  1. A simple digital inelastic electron tunnelling spectrometer

    Reynolds, S., Gregson, L. D., Horley, C. C., Oxley, D. P. & Pritchard, R. G. 1980 In : Surface and Interface Analysis. 2, 6, p. 217-221 5 p.

    Research output: Contribution to journalArticle

  2. Inelastic electron tunnelling spectroscopy of silane coupling agents

    Brewis, D. M., Comyn, J., Oxley, D. P., Pritchard, R. G., Reynolds, S., Werrett, C. R. & Kinloch, A. J. 1984 In : Surface and Interface Analysis. 6, 1, p. 40-45 6 p.

    Research output: Contribution to journalArticle

  3. The switching mechanism in amorphous silicon junctions

    Lecomber, P. G., Owen, A. E., Spear, W. E., Hajto, J., Snell, A. J., Choi, W. K., Rose, M. J. & Reynolds, S. 1985 In : Journal of Non-Crystalline Solids. 77-8, 2, p. 1373-1382 10 p.

    Research output: Contribution to journalArticle

  4. Amorphous semiconductors

    Reynolds, S. & Belford, R. E. 1987 In : Physics in Technology. 18, 5, p. 193-203 11 p.

    Research output: Contribution to journalArticle

  5. Bias polarity-dependent changes in vibrational mode energy in inelastic electron tunnelling spectroscopy

    Reynolds, S., Peasgood, A., Oxley, D. P., Pritchard, R. G., Walmsley, D. G., Tomlin, J. L. & Turner, R. J. 1987 In : Journal of Physics C-Solid State Physics. 20, 27, p. 4297-4306 10 p.

    Research output: Contribution to journalArticle

  6. Pre-formed J-V and C-V characteristics of a-Si:H p+ ni junctions

    Choi, W. K., Reynolds, S., Hajto, J., Gage, S. M., Owen, A. E., Snell, A. J., Flanagan, J. M., Rose, M. J., Djamdji, F. J., Lecomber, P. G. & Spear, W. E. 1987 In : Journal of Non-Crystalline Solids. 97-8, 2, p. 1331-1334 4 p.

    Research output: Contribution to journalArticle

  7. Transient current instabilities in a-Si: HP+ni structures

    Choi, W. K., Reynolds, S., Hajto, J., Owen, A. E., Snell, A. J., Rose, M. J., Lecomber, P. G. & Spear, W. E. 1987 In : IEE Proceedings-I Solid State and Electron Devices. 134, 1, p. 1-6 6 p.

    Research output: Contribution to journalArticle

  8. A phenomenological model of switching in metal‐thin insulator‐semiconductor‐semiconductor devices: a development of the analogy with the thyristor

    Choi, W. K., De Lima, J. J., Owen, A. E. & Reynolds, S. 1989 In : Journal of Applied Physics. 65, 5, p. 2102-2110 9 p.

    Research output: Contribution to journalArticle

  9. Anomalous high zero bias resistance in metal - amorphous silicon - metal structures

    Gage, S. M., Hajto, J., Reynolds, S., Choi, W. K., Rose, M. J., Lecomber, P. G., Snell, A. J. & Owen, A. E. 1989 In : Journal of Non-Crystalline Solids. 115, 1-3, p. 171-173 3 p.

    Research output: Contribution to journalArticle

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