1.2-mu m Semiconductor Disk Laser Frequency Doubled With Periodically Poled Lithium Tantalate Crystal

Jussi Rautiainen, Ksenia A. Fedorova, Jari Nikkinen, David Eger, Ville-Markus Korpijarvi, E. U. Rafailov, Oleg G. Okhotnikov

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    In this letter, we demonstrate an optically pumped semiconductor disk laser frequency doubled with a periodically poled lithium tantalate crystal. Crystals with various lengths were tested for intracavity frequency conversion. The semiconductor disk laser exploited GaInNAs-based active region with GaAs-AlAs distributed Bragg mirror to produce emission at 1.2-mu m wavelength. The frequency doubled power up to 760 mW at the wavelength of 610 nm was achieved with a 2-mm-long crystal.

    Original languageEnglish
    Pages (from-to)453-455
    Number of pages3
    JournalIEEE Photonics Technology Letters
    Volume22
    Issue number7
    DOIs
    Publication statusPublished - 1 Apr 2010

    Keywords

    • Nonlinear optics
    • quantum-well (QW) lasers
    • semiconductor lasers
    • surface-emitting lasers
    • GENERATION

    Cite this

    Rautiainen, J., Fedorova, K. A., Nikkinen, J., Eger, D., Korpijarvi, V-M., Rafailov, E. U., & Okhotnikov, O. G. (2010). 1.2-mu m Semiconductor Disk Laser Frequency Doubled With Periodically Poled Lithium Tantalate Crystal. IEEE Photonics Technology Letters, 22(7), 453-455. https://doi.org/10.1109/LPT.2010.2040989