1.2-mu m Semiconductor Disk Laser Frequency Doubled With Periodically Poled Lithium Tantalate Crystal

Jussi Rautiainen; Ksenia A. Fedorova; Jari Nikkinen; David Eger; Ville-Markus Korpijarvi; E. U. Rafailov; Oleg G. Okhotnikov

doi:10.1109/LPT.2010.2040989

1.2-mu m Semiconductor Disk Laser Frequency Doubled With Periodically Poled Lithium Tantalate Crystal

Jussi Rautiainen, Ksenia A. Fedorova, Jari Nikkinen, David Eger, Ville-Markus Korpijarvi, E. U. Rafailov, Oleg G. Okhotnikov

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In this letter, we demonstrate an optically pumped semiconductor disk laser frequency doubled with a periodically poled lithium tantalate crystal. Crystals with various lengths were tested for intracavity frequency conversion. The semiconductor disk laser exploited GaInNAs-based active region with GaAs-AlAs distributed Bragg mirror to produce emission at 1.2-mu m wavelength. The frequency doubled power up to 760 mW at the wavelength of 610 nm was achieved with a 2-mm-long crystal.

Original language	English
Pages (from-to)	453-455
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	7
DOIs	https://doi.org/10.1109/LPT.2010.2040989
Publication status	Published - 1 Apr 2010

Keywords

Nonlinear optics
quantum-well (QW) lasers
semiconductor lasers
surface-emitting lasers
GENERATION

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10.1109/LPT.2010.2040989

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@article{d3b6f8a971004911b591c271296aee65,

title = "1.2-mu m Semiconductor Disk Laser Frequency Doubled With Periodically Poled Lithium Tantalate Crystal",

abstract = "In this letter, we demonstrate an optically pumped semiconductor disk laser frequency doubled with a periodically poled lithium tantalate crystal. Crystals with various lengths were tested for intracavity frequency conversion. The semiconductor disk laser exploited GaInNAs-based active region with GaAs-AlAs distributed Bragg mirror to produce emission at 1.2-mu m wavelength. The frequency doubled power up to 760 mW at the wavelength of 610 nm was achieved with a 2-mm-long crystal.",

keywords = "Nonlinear optics, quantum-well (QW) lasers, semiconductor lasers, surface-emitting lasers, GENERATION",

author = "Jussi Rautiainen and Fedorova, {Ksenia A.} and Jari Nikkinen and David Eger and Ville-Markus Korpijarvi and Rafailov, {E. U.} and Okhotnikov, {Oleg G.}",

year = "2010",

month = apr,

day = "1",

doi = "10.1109/LPT.2010.2040989",

language = "English",

volume = "22",

pages = "453--455",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - 1.2-mu m Semiconductor Disk Laser Frequency Doubled With Periodically Poled Lithium Tantalate Crystal

AU - Rautiainen, Jussi

AU - Fedorova, Ksenia A.

AU - Nikkinen, Jari

AU - Eger, David

AU - Korpijarvi, Ville-Markus

AU - Rafailov, E. U.

AU - Okhotnikov, Oleg G.

PY - 2010/4/1

Y1 - 2010/4/1

N2 - In this letter, we demonstrate an optically pumped semiconductor disk laser frequency doubled with a periodically poled lithium tantalate crystal. Crystals with various lengths were tested for intracavity frequency conversion. The semiconductor disk laser exploited GaInNAs-based active region with GaAs-AlAs distributed Bragg mirror to produce emission at 1.2-mu m wavelength. The frequency doubled power up to 760 mW at the wavelength of 610 nm was achieved with a 2-mm-long crystal.

AB - In this letter, we demonstrate an optically pumped semiconductor disk laser frequency doubled with a periodically poled lithium tantalate crystal. Crystals with various lengths were tested for intracavity frequency conversion. The semiconductor disk laser exploited GaInNAs-based active region with GaAs-AlAs distributed Bragg mirror to produce emission at 1.2-mu m wavelength. The frequency doubled power up to 760 mW at the wavelength of 610 nm was achieved with a 2-mm-long crystal.

KW - Nonlinear optics

KW - quantum-well (QW) lasers

KW - semiconductor lasers

KW - surface-emitting lasers

KW - GENERATION

U2 - 10.1109/LPT.2010.2040989

DO - 10.1109/LPT.2010.2040989

M3 - Article

SN - 1041-1135

VL - 22

SP - 453

EP - 455

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 7

ER -

1.2-mu m Semiconductor Disk Laser Frequency Doubled With Periodically Poled Lithium Tantalate Crystal

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Keywords

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