1.2-mu m Semiconductor Disk Laser Frequency Doubled With Periodically Poled Lithium Tantalate Crystal

TY - JOUR

T1 - 1.2-mu m Semiconductor Disk Laser Frequency Doubled With Periodically Poled Lithium Tantalate Crystal

AU - Rautiainen, Jussi

AU - Fedorova, Ksenia A.

AU - Nikkinen, Jari

AU - Eger, David

AU - Korpijarvi, Ville-Markus

AU - Rafailov, E. U.

AU - Okhotnikov, Oleg G.

PY - 2010/4/1

Y1 - 2010/4/1

N2 - In this letter, we demonstrate an optically pumped semiconductor disk laser frequency doubled with a periodically poled lithium tantalate crystal. Crystals with various lengths were tested for intracavity frequency conversion. The semiconductor disk laser exploited GaInNAs-based active region with GaAs-AlAs distributed Bragg mirror to produce emission at 1.2-mu m wavelength. The frequency doubled power up to 760 mW at the wavelength of 610 nm was achieved with a 2-mm-long crystal.

AB - In this letter, we demonstrate an optically pumped semiconductor disk laser frequency doubled with a periodically poled lithium tantalate crystal. Crystals with various lengths were tested for intracavity frequency conversion. The semiconductor disk laser exploited GaInNAs-based active region with GaAs-AlAs distributed Bragg mirror to produce emission at 1.2-mu m wavelength. The frequency doubled power up to 760 mW at the wavelength of 610 nm was achieved with a 2-mm-long crystal.

KW - Nonlinear optics

KW - quantum-well (QW) lasers

KW - semiconductor lasers

KW - surface-emitting lasers

KW - GENERATION

U2 - 10.1109/LPT.2010.2040989

DO - 10.1109/LPT.2010.2040989

M3 - Article

SN - 1041-1135

VL - 22

SP - 453

EP - 455

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 7

ER -