1.25 μm quantum dot tapered external-cavity laser, with 1 W output power and 30 nm tunability

S. E. Haggett; A. M. Krakowski; I. Montrosset; M. A. Cataluna

doi:10.1109/ISLC.2014.178

1.25 μm quantum dot tapered external-cavity laser, with 1 W output power and 30 nm tunability

S. E. Haggett, A. M. Krakowski, I. Montrosset, M. A. Cataluna

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A quantum-dot tapered waveguide external cavity laser with 30nm tunability is reported, with a maximum output power of 0.95W, demonstrating a 22-fold power increase with respect to similar narrow-ridge lasers, for the same current density.

Original language	English
Title of host publication	Conference Digest - IEEE International Semiconductor Laser Conference
Publisher	Institute of Electrical and Electronics Engineers
Pages	90-91
Number of pages	2
ISBN (Print)	9781479957217
DOIs	https://doi.org/10.1109/ISLC.2014.178
Publication status	Published - 16 Dec 2014
Event	2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 - Palma de Mallorca, Spain Duration: 7 Sep 2014 → 10 Sep 2014

Conference

Conference	2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014
Country/Territory	Spain
City	Palma de Mallorca
Period	7/09/14 → 10/09/14

Access to Document

10.1109/ISLC.2014.178

Cite this

@inproceedings{ded5fe9faef745f1b9f740828caf30a1,

title = "1.25 μm quantum dot tapered external-cavity laser, with 1 W output power and 30 nm tunability",

abstract = "A quantum-dot tapered waveguide external cavity laser with 30nm tunability is reported, with a maximum output power of 0.95W, demonstrating a 22-fold power increase with respect to similar narrow-ridge lasers, for the same current density.",

author = "Haggett, {S. E.} and Krakowski, {A. M.} and I. Montrosset and Cataluna, {M. A.}",

year = "2014",

month = dec,

day = "16",

doi = "10.1109/ISLC.2014.178",

language = "English",

isbn = "9781479957217",

pages = "90--91",

booktitle = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers",

note = "2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 ; Conference date: 07-09-2014 Through 10-09-2014",

}

Haggett, SE, Krakowski, AM, Montrosset, I & Cataluna, MA 2014, 1.25 μm quantum dot tapered external-cavity laser, with 1 W output power and 30 nm tunability. in Conference Digest - IEEE International Semiconductor Laser Conference., 6987465, Institute of Electrical and Electronics Engineers, pp. 90-91, 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014, Palma de Mallorca, Spain, 7/09/14. https://doi.org/10.1109/ISLC.2014.178

1.25 μm quantum dot tapered external-cavity laser, with 1 W output power and 30 nm tunability. / Haggett, S. E.; Krakowski, A. M.; Montrosset, I.; Cataluna, M. A.

Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers, 2014. p. 90-91 6987465.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - 1.25 μm quantum dot tapered external-cavity laser, with 1 W output power and 30 nm tunability

AU - Haggett, S. E.

AU - Krakowski, A. M.

AU - Montrosset, I.

AU - Cataluna, M. A.

PY - 2014/12/16

Y1 - 2014/12/16

N2 - A quantum-dot tapered waveguide external cavity laser with 30nm tunability is reported, with a maximum output power of 0.95W, demonstrating a 22-fold power increase with respect to similar narrow-ridge lasers, for the same current density.

AB - A quantum-dot tapered waveguide external cavity laser with 30nm tunability is reported, with a maximum output power of 0.95W, demonstrating a 22-fold power increase with respect to similar narrow-ridge lasers, for the same current density.

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U2 - 10.1109/ISLC.2014.178

DO - 10.1109/ISLC.2014.178

M3 - Conference contribution

AN - SCOPUS:84920167754

SN - 9781479957217

SP - 90

EP - 91

BT - Conference Digest - IEEE International Semiconductor Laser Conference

PB - Institute of Electrical and Electronics Engineers

T2 - 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014

Y2 - 7 September 2014 through 10 September 2014

ER -

1.25 μm quantum dot tapered external-cavity laser, with 1 W output power and 30 nm tunability

Abstract

Conference

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Development of versatile wavelength tunable external cavity quantum dot lasers

Cite this

1.25 μm quantum dot tapered external-cavity laser, with 1 W output power and 30 nm tunability

Abstract

Conference

Access to Document

Other files and links

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Student Theses

Development of versatile wavelength tunable external cavity quantum dot lasers

Cite this