1270 nm Quantum Dot Based Semiconductor Disk Lasers

M. Butkus; J. Rautiainen; O. G. Okhotnikov; S. S. Mikhrin; I. L. Krestnikov; E. U. Rafailov

doi:10.1109/ISLC.2010.5642748

1270 nm Quantum Dot Based Semiconductor Disk Lasers

M. Butkus, J. Rautiainen, O. G. Okhotnikov, S. S. Mikhrin, I. L. Krestnikov, E. U. Rafailov

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Continuous wave optically pumped semiconductor disk lasers based on Stranski-Krastanow grown quantum dots reach 1270nm for first time with the output power up to 1.6 W. Samples with different numbers of QD layers are compared.

Original language	English
Title of host publication	Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Place of Publication	New York
Publisher	IEEE Computer Society
Pages	71-72
Number of pages	2
ISBN (Print)	9781424456833
DOIs	https://doi.org/10.1109/ISLC.2010.5642748
Publication status	Published - 2010
Event	22nd IEEE International Semiconductor Laser Conference - Kyoto, Japan Duration: 26 Sept 2010 → 30 Sept 2010 http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5623519

Conference

Conference	22nd IEEE International Semiconductor Laser Conference
Country/Territory	Japan
City	Kyoto
Period	26/09/10 → 30/09/10
Internet address	http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5623519

Keywords

POWER

Access to Document

10.1109/ISLC.2010.5642748

Cite this

@inproceedings{b4a88145358c4b1abe4a71919e539337,

title = "1270 nm Quantum Dot Based Semiconductor Disk Lasers",

abstract = "Continuous wave optically pumped semiconductor disk lasers based on Stranski-Krastanow grown quantum dots reach 1270nm for first time with the output power up to 1.6 W. Samples with different numbers of QD layers are compared.",

keywords = "POWER",

author = "M. Butkus and J. Rautiainen and Okhotnikov, {O. G.} and Mikhrin, {S. S.} and Krestnikov, {I. L.} and Rafailov, {E. U.}",

year = "2010",

doi = "10.1109/ISLC.2010.5642748",

language = "English",

isbn = "9781424456833",

pages = "71--72",

booktitle = "Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International",

publisher = "IEEE Computer Society",

note = "22nd IEEE International Semiconductor Laser Conference ; Conference date: 26-09-2010 Through 30-09-2010",

url = "http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5623519",

}

Butkus, M, Rautiainen, J, Okhotnikov, OG, Mikhrin, SS, Krestnikov, IL & Rafailov, EU 2010, 1270 nm Quantum Dot Based Semiconductor Disk Lasers. in Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International. IEEE Computer Society, New York, pp. 71-72, 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26/09/10. https://doi.org/10.1109/ISLC.2010.5642748

TY - GEN

T1 - 1270 nm Quantum Dot Based Semiconductor Disk Lasers

AU - Butkus, M.

AU - Rautiainen, J.

AU - Okhotnikov, O. G.

AU - Mikhrin, S. S.

AU - Krestnikov, I. L.

AU - Rafailov, E. U.

PY - 2010

Y1 - 2010

N2 - Continuous wave optically pumped semiconductor disk lasers based on Stranski-Krastanow grown quantum dots reach 1270nm for first time with the output power up to 1.6 W. Samples with different numbers of QD layers are compared.

AB - Continuous wave optically pumped semiconductor disk lasers based on Stranski-Krastanow grown quantum dots reach 1270nm for first time with the output power up to 1.6 W. Samples with different numbers of QD layers are compared.

KW - POWER

U2 - 10.1109/ISLC.2010.5642748

DO - 10.1109/ISLC.2010.5642748

M3 - Conference contribution

SN - 9781424456833

SP - 71

EP - 72

BT - Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International

PB - IEEE Computer Society

CY - New York

T2 - 22nd IEEE International Semiconductor Laser Conference

Y2 - 26 September 2010 through 30 September 2010

ER -

1270 nm Quantum Dot Based Semiconductor Disk Lasers

Abstract

Conference

Keywords

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