202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

K. A. Fedorova, M. A. Cataluna, I. Krestnikov, D. Livshits, E. U. Rafailov

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.

    Original languageEnglish
    Title of host publicationSemiconductor Laser Conference (ISLC), 2010 22nd IEEE International
    Place of PublicationNEW YORK
    PublisherIEEE Computer Society
    Pages172-173
    Number of pages2
    ISBN (Print)9781424456833
    DOIs
    Publication statusPublished - 2010
    Event22nd IEEE International Semiconductor Laser Conference - Kyoto, Japan
    Duration: 26 Sep 201030 Sep 2010
    http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5623519

    Conference

    Conference22nd IEEE International Semiconductor Laser Conference
    CountryJapan
    CityKyoto
    Period26/09/1030/09/10
    Internet address

    Keywords

    • RANGE

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