202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

K. A.  Fedorova; M. A. Cataluna; I. Krestnikov; D. Livshits; E. U.  Rafailov

doi:10.1109/ISLC.2010.5642655

202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

K. A. Fedorova, M. A. Cataluna, I. Krestnikov, D. Livshits, E. U. Rafailov

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.

Original language	English
Title of host publication	Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Place of Publication	NEW YORK
Publisher	IEEE Computer Society
Pages	172-173
Number of pages	2
ISBN (Print)	9781424456833
DOIs	https://doi.org/10.1109/ISLC.2010.5642655
Publication status	Published - 2010
Event	22nd IEEE International Semiconductor Laser Conference - Kyoto, Japan Duration: 26 Sept 2010 → 30 Sept 2010 http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5623519

Conference

Conference	22nd IEEE International Semiconductor Laser Conference
Country/Territory	Japan
City	Kyoto
Period	26/09/10 → 30/09/10
Internet address	http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5623519

Keywords

RANGE

Access to Document

10.1109/ISLC.2010.5642655

Cite this

@inproceedings{b2549ce91c0f43749393ef86a2a8b3e1,

title = "202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser",

abstract = "Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.",

keywords = "RANGE",

author = "Fedorova, \{K. A.\} and Cataluna, \{M. A.\} and I. Krestnikov and D. Livshits and Rafailov, \{E. U.\}",

note = "Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International ; 22nd IEEE International Semiconductor Laser Conference ; Conference date: 26-09-2010 Through 30-09-2010",

year = "2010",

doi = "10.1109/ISLC.2010.5642655",

language = "English",

isbn = "9781424456833 ",

pages = "172--173",

booktitle = "Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International",

publisher = "IEEE Computer Society",

url = "http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5623519",

}

Fedorova, KA, Cataluna, MA, Krestnikov, I, Livshits, D & Rafailov, EU 2010, 202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser. in Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International . IEEE Computer Society, NEW YORK, pp. 172-173, 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26/09/10. https://doi.org/10.1109/ISLC.2010.5642655

TY - GEN

T1 - 202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

AU - Fedorova, K. A.

AU - Cataluna, M. A.

AU - Krestnikov, I.

AU - Livshits, D.

AU - Rafailov, E. U.

N1 - Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International

PY - 2010

Y1 - 2010

N2 - Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.

AB - Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.

KW - RANGE

U2 - 10.1109/ISLC.2010.5642655

DO - 10.1109/ISLC.2010.5642655

M3 - Conference contribution

SN - 9781424456833

SP - 172

EP - 173

BT - Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International

PB - IEEE Computer Society

CY - NEW YORK

T2 - 22nd IEEE International Semiconductor Laser Conference

Y2 - 26 September 2010 through 30 September 2010

ER -

202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

Abstract

Conference

Keywords

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