760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation

H. L. Wang, L. Kong, D. Bajek, S. Haggett, X. L. Wang, B. F. Cui, J. Q. Pan, Y. Ding, M. A. Cataluna (Lead / Corresponding author)

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We report a novel semiconductor passively mode-locked edge-emitting laser based on a multi-quantum-well structure, emitting at 766 nm and enabling the generation of a stable 19.4-GHz pulse train with a pulse duration of ∼5 ps.

    Original languageEnglish
    Title of host publicationCLEO 2013
    Subtitle of host publicationQELS Fundamental Science
    PublisherIEEE
    ISBN (Print)9781557529725
    DOIs
    Publication statusPublished - 2013
    Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
    Duration: 9 Jun 201314 Jun 2013

    Publication series

    NameOSA Technical Digest

    Conference

    Conference2013 Conference on Lasers and Electro-Optics, CLEO 2013
    Country/TerritoryUnited States
    CitySan Jose, CA
    Period9/06/1314/06/13

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials

    Fingerprint

    Dive into the research topics of '760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation'. Together they form a unique fingerprint.

    Cite this