760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation

H. L. Wang, L. Kong, D. Bajek, S. Haggett, X. L. Wang, B. F. Cui, J. Q. Pan, Y. Ding, M. A. Cataluna (Lead / Corresponding author)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report a novel semiconductor passively mode-locked edge-emitting laser based on a multi-quantum-well structure, emitting at 766 nm and enabling the generation of a stable 19.4-GHz pulse train with a pulse duration of ∼5 ps.

Original languageEnglish
Title of host publicationCLEO 2013
Subtitle of host publicationQELS Fundamental Science
PublisherIEEE
ISBN (Print)9781557529725
DOIs
Publication statusPublished - 2013
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
Duration: 9 Jun 201314 Jun 2013

Publication series

NameOSA Technical Digest

Conference

Conference2013 Conference on Lasers and Electro-Optics, CLEO 2013
Country/TerritoryUnited States
CitySan Jose, CA
Period9/06/1314/06/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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