760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation

H. L. Wang; L. Kong; D. Bajek; S. Haggett; X. L. Wang; B. F. Cui; J. Q. Pan; Y. Ding; M. A. Cataluna

doi:10.1364/cleo_qels.2013.jth2a.20

760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation

H. L. Wang, L. Kong, D. Bajek, S. Haggett, X. L. Wang, B. F. Cui, J. Q. Pan, Y. Ding, M. A. Cataluna (Lead / Corresponding author)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report a novel semiconductor passively mode-locked edge-emitting laser based on a multi-quantum-well structure, emitting at 766 nm and enabling the generation of a stable 19.4-GHz pulse train with a pulse duration of ∼5 ps.

Original language	English
Title of host publication	CLEO 2013
Subtitle of host publication	QELS Fundamental Science
Publisher	IEEE
ISBN (Print)	9781557529725
DOIs	https://doi.org/10.1364/cleo_qels.2013.jth2a.20
Publication status	Published - 2013
Event	2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States Duration: 9 Jun 2013 → 14 Jun 2013

Publication series

Name	OSA Technical Digest

Conference

Conference	2013 Conference on Lasers and Electro-Optics, CLEO 2013
Country/Territory	United States
City	San Jose, CA
Period	9/06/13 → 14/06/13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1364/cleo_qels.2013.jth2a.20

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@inproceedings{5611bdda9c6c4237a78aa461f63e8b68,

title = "760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation",

abstract = "We report a novel semiconductor passively mode-locked edge-emitting laser based on a multi-quantum-well structure, emitting at 766 nm and enabling the generation of a stable 19.4-GHz pulse train with a pulse duration of ∼5 ps.",

author = "Wang, \{H. L.\} and L. Kong and D. Bajek and S. Haggett and Wang, \{X. L.\} and Cui, \{B. F.\} and Pan, \{J. Q.\} and Y. Ding and Cataluna, \{M. A.\}",

note = "Copyright: {\textcopyright} 2013 Optical Society of America.; 2013 Conference on Lasers and Electro-Optics, CLEO 2013 ; Conference date: 09-06-2013 Through 14-06-2013",

year = "2013",

doi = "10.1364/cleo\_qels.2013.jth2a.20",

language = "English",

isbn = "9781557529725",

series = "OSA Technical Digest",

publisher = "IEEE",

booktitle = "CLEO 2013",

}

Wang, HL, Kong, L, Bajek, D, Haggett, S, Wang, XL, Cui, BF, Pan, JQ, Ding, Y & Cataluna, MA 2013, 760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation. in CLEO 2013: QELS Fundamental Science., JTh2A.20, OSA Technical Digest, IEEE, 2013 Conference on Lasers and Electro-Optics, CLEO 2013, San Jose, CA, United States, 9/06/13. https://doi.org/10.1364/cleo_qels.2013.jth2a.20

TY - GEN

T1 - 760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation

AU - Wang, H. L.

AU - Kong, L.

AU - Bajek, D.

AU - Haggett, S.

AU - Wang, X. L.

AU - Cui, B. F.

AU - Pan, J. Q.

AU - Ding, Y.

AU - Cataluna, M. A.

PY - 2013

Y1 - 2013

N2 - We report a novel semiconductor passively mode-locked edge-emitting laser based on a multi-quantum-well structure, emitting at 766 nm and enabling the generation of a stable 19.4-GHz pulse train with a pulse duration of ∼5 ps.

AB - We report a novel semiconductor passively mode-locked edge-emitting laser based on a multi-quantum-well structure, emitting at 766 nm and enabling the generation of a stable 19.4-GHz pulse train with a pulse duration of ∼5 ps.

UR - http://www.scopus.com/inward/record.url?scp=84903778937&partnerID=8YFLogxK

U2 - 10.1364/cleo_qels.2013.jth2a.20

DO - 10.1364/cleo_qels.2013.jth2a.20

M3 - Conference contribution

SN - 9781557529725

T3 - OSA Technical Digest

BT - CLEO 2013

PB - IEEE

T2 - 2013 Conference on Lasers and Electro-Optics, CLEO 2013

Y2 - 9 June 2013 through 14 June 2013

ER -

760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation

Abstract

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Conference

ASJC Scopus subject areas

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