760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation

H. L. Wang; L. Kong; D. Bajek; S. Haggett; X. L. Wang; B. F. Cui; J. Q. Pan; Y. Ding; M. A. Cataluna

doi:10.1364/cleo_qels.2013.jth2a.20

760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation

H. L. Wang
, L. Kong
, D. Bajek
, S. Haggett
, X. L. Wang
, B. F. Cui
, J. Q. Pan
, Y. Ding
, M. A. Cataluna (Lead / Corresponding author)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report a novel semiconductor passively mode-locked edge-emitting laser based on a multi-quantum-well structure, emitting at 766 nm and enabling the generation of a stable 19.4-GHz pulse train with a pulse duration of ∼5 ps.

Original language	English
Title of host publication	CLEO 2013
Subtitle of host publication	QELS Fundamental Science
Publisher	IEEE
ISBN (Print)	9781557529725
DOIs	https://doi.org/10.1364/cleo_qels.2013.jth2a.20
Publication status	Published - 2013
Event	2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States Duration: 9 Jun 2013 → 14 Jun 2013

Publication series

Name	OSA Technical Digest

Conference

Conference	2013 Conference on Lasers and Electro-Optics, CLEO 2013
Country/Territory	United States
City	San Jose, CA
Period	9/06/13 → 14/06/13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1364/cleo_qels.2013.jth2a.20

Cite this

@inproceedings{5611bdda9c6c4237a78aa461f63e8b68,

title = "760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation",

abstract = "We report a novel semiconductor passively mode-locked edge-emitting laser based on a multi-quantum-well structure, emitting at 766 nm and enabling the generation of a stable 19.4-GHz pulse train with a pulse duration of ∼5 ps.",

author = "Wang, \{H. L.\} and L. Kong and D. Bajek and S. Haggett and Wang, \{X. L.\} and Cui, \{B. F.\} and Pan, \{J. Q.\} and Y. Ding and Cataluna, \{M. A.\}",

note = "Copyright: {\textcopyright} 2013 Optical Society of America.; 2013 Conference on Lasers and Electro-Optics, CLEO 2013 ; Conference date: 09-06-2013 Through 14-06-2013",

year = "2013",

doi = "10.1364/cleo\_qels.2013.jth2a.20",

language = "English",

isbn = "9781557529725",

series = "OSA Technical Digest",

publisher = "IEEE",

booktitle = "CLEO 2013",

}

Wang, HL, Kong, L, Bajek, D, Haggett, S, Wang, XL, Cui, BF, Pan, JQ, Ding, Y & Cataluna, MA 2013, 760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation. in CLEO 2013: QELS Fundamental Science., JTh2A.20, OSA Technical Digest, IEEE, 2013 Conference on Lasers and Electro-Optics, CLEO 2013, San Jose, CA, United States, 9/06/13. https://doi.org/10.1364/cleo_qels.2013.jth2a.20

TY - GEN

T1 - 760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation

AU - Wang, H. L.

AU - Kong, L.

AU - Bajek, D.

AU - Haggett, S.

AU - Wang, X. L.

AU - Cui, B. F.

AU - Pan, J. Q.

AU - Ding, Y.

AU - Cataluna, M. A.

PY - 2013

Y1 - 2013

N2 - We report a novel semiconductor passively mode-locked edge-emitting laser based on a multi-quantum-well structure, emitting at 766 nm and enabling the generation of a stable 19.4-GHz pulse train with a pulse duration of ∼5 ps.

AB - We report a novel semiconductor passively mode-locked edge-emitting laser based on a multi-quantum-well structure, emitting at 766 nm and enabling the generation of a stable 19.4-GHz pulse train with a pulse duration of ∼5 ps.

UR - https://www.scopus.com/pages/publications/84903778937

U2 - 10.1364/cleo_qels.2013.jth2a.20

DO - 10.1364/cleo_qels.2013.jth2a.20

M3 - Conference contribution

SN - 9781557529725

T3 - OSA Technical Digest

BT - CLEO 2013

PB - IEEE

T2 - 2013 Conference on Lasers and Electro-Optics, CLEO 2013

Y2 - 9 June 2013 through 14 June 2013

ER -

760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation

Abstract

Publication series

Conference

ASJC Scopus subject areas

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