A new technique for direct determination of the density of electronic states (DOS) in disordered semiconductors is described. It involves Laplace transformation of transient photocurrent data I(t) followed by the numerical solution of the system of linear algebraic equations obtained from the Fredholm integral of the first kind, for a DOS represented by a series of discrete levels. No approximations are used in the solution, and no prior assumptions as to the form of the DOS are made. The fidelity of this method is assessed and compared with existing techniques by application to computer-simulated I(t) data generated from single-level and continuous DOS profiles, and to experimental data.
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - Jan 2000|
|Event||Amorphous and Heterogeneus Silicon Thin Films-2000 - San Francisco, CA, United States|
Duration: 24 Apr 2000 → 28 Apr 2000