A laplace transform technique for direct determination of density of electronic states in disordered semiconductors from transient photocurrent data

M. J. Gueorguieva, C. Main, S. Reynolds

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2 Citations (Scopus)

Abstract

A new technique for direct determination of the density of electronic states (DOS) in disordered semiconductors is described. It involves Laplace transformation of transient photocurrent data I(t) followed by the numerical solution of the system of linear algebraic equations obtained from the Fredholm integral of the first kind, for a DOS represented by a series of discrete levels. No approximations are used in the solution, and no prior assumptions as to the form of the DOS are made. The fidelity of this method is assessed and compared with existing techniques by application to computer-simulated I(t) data generated from single-level and continuous DOS profiles, and to experimental data.

Original languageEnglish
JournalMaterials Research Society Symposium - Proceedings
Volume609
DOIs
Publication statusPublished - Jan 2000
EventAmorphous and Heterogeneus Silicon Thin Films-2000 - San Francisco, CA, United States
Duration: 24 Apr 200028 Apr 2000

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Electronic density of states
Laplace transforms
Photocurrents
photocurrents
Semiconductor materials
electronics
Laplace transformation
linear equations
Linear equations
profiles
approximation

Cite this

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abstract = "A new technique for direct determination of the density of electronic states (DOS) in disordered semiconductors is described. It involves Laplace transformation of transient photocurrent data I(t) followed by the numerical solution of the system of linear algebraic equations obtained from the Fredholm integral of the first kind, for a DOS represented by a series of discrete levels. No approximations are used in the solution, and no prior assumptions as to the form of the DOS are made. The fidelity of this method is assessed and compared with existing techniques by application to computer-simulated I(t) data generated from single-level and continuous DOS profiles, and to experimental data.",
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AU - Main, C.

AU - Reynolds, S.

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N2 - A new technique for direct determination of the density of electronic states (DOS) in disordered semiconductors is described. It involves Laplace transformation of transient photocurrent data I(t) followed by the numerical solution of the system of linear algebraic equations obtained from the Fredholm integral of the first kind, for a DOS represented by a series of discrete levels. No approximations are used in the solution, and no prior assumptions as to the form of the DOS are made. The fidelity of this method is assessed and compared with existing techniques by application to computer-simulated I(t) data generated from single-level and continuous DOS profiles, and to experimental data.

AB - A new technique for direct determination of the density of electronic states (DOS) in disordered semiconductors is described. It involves Laplace transformation of transient photocurrent data I(t) followed by the numerical solution of the system of linear algebraic equations obtained from the Fredholm integral of the first kind, for a DOS represented by a series of discrete levels. No approximations are used in the solution, and no prior assumptions as to the form of the DOS are made. The fidelity of this method is assessed and compared with existing techniques by application to computer-simulated I(t) data generated from single-level and continuous DOS profiles, and to experimental data.

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JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

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