A study of electronic defects in hydrogenated amorphous silicon prepared by the expanding thermal plasma technique

S. Reynolds, C. Main, I. Zrinscak, Z. Aneva, D. Nesheva

    Research output: Chapter in Book/Report/Conference proceedingChapter (peer-reviewed)

    1 Citation (Scopus)
    Original languageEnglish
    Title of host publicationAmorphous and nanocrystalline silicon-based films-2003
    EditorsJohn R. Abelson, Gautman Ganguly, Hideki Matsumura, John Robertson, Eric A. Schiff
    PublisherMaterials Research Society
    Pages143-148
    Number of pages6
    Volume762
    ISBN (Print)9781558996991
    Publication statusPublished - 2003
    Event2003 MRS Spring Meeting. Symposium on Amorphous and Nanocrystalline Silicon-Based Films - San Francisco, Ca., United States
    Duration: 22 Apr 200325 Apr 2003

    Publication series

    NameMRS Symposium Proceedings Series
    Volume762

    Conference

    Conference2003 MRS Spring Meeting. Symposium on Amorphous and Nanocrystalline Silicon-Based Films
    CountryUnited States
    CitySan Francisco, Ca.
    Period22/04/0325/04/03

    Cite this

    Reynolds, S., Main, C., Zrinscak, I., Aneva, Z., & Nesheva, D. (2003). A study of electronic defects in hydrogenated amorphous silicon prepared by the expanding thermal plasma technique. In J. R. Abelson, G. Ganguly, H. Matsumura, J. Robertson, & E. A. Schiff (Eds.), Amorphous and nanocrystalline silicon-based films-2003 (Vol. 762, pp. 143-148). (MRS Symposium Proceedings Series; Vol. 762). Materials Research Society. http://www.cambridge.org/gb/knowledge/isbn/item6522577/?site_locale=en_GB