A study of electronic defects in hydrogenated amorphous silicon prepared by the expanding thermal plasma technique

S. Reynolds; C. Main; I. Zrinscak; Z. Aneva; D. Nesheva

A study of electronic defects in hydrogenated amorphous silicon prepared by the expanding thermal plasma technique

S. Reynolds, C. Main, I. Zrinscak, Z. Aneva, D. Nesheva

Research output: Chapter in Book/Report/Conference proceeding › Chapter (peer-reviewed)

Original language	English
Title of host publication	Amorphous and nanocrystalline silicon-based films-2003
Editors	John R. Abelson, Gautman Ganguly, Hideki Matsumura, John Robertson, Eric A. Schiff
Publisher	Materials Research Society
Pages	143-148
Number of pages	6
Volume	762
ISBN (Print)	9781558996991
Publication status	Published - 2003
Event	2003 MRS Spring Meeting. Symposium on Amorphous and Nanocrystalline Silicon-Based Films - San Francisco, Ca., United States Duration: 22 Apr 2003 → 25 Apr 2003

Publication series

Name	MRS Symposium Proceedings Series
Volume	762

Conference

Conference	2003 MRS Spring Meeting. Symposium on Amorphous and Nanocrystalline Silicon-Based Films
Country/Territory	United States
City	San Francisco, Ca.
Period	22/04/03 → 25/04/03

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Cite this

Reynolds, S., Main, C., Zrinscak, I., Aneva, Z., & Nesheva, D. (2003). A study of electronic defects in hydrogenated amorphous silicon prepared by the expanding thermal plasma technique. In J. R. Abelson, G. Ganguly, H. Matsumura, J. Robertson, & E. A. Schiff (Eds.), Amorphous and nanocrystalline silicon-based films-2003 (Vol. 762, pp. 143-148). (MRS Symposium Proceedings Series; Vol. 762). Materials Research Society. http://www.cambridge.org/gb/knowledge/isbn/item6522577/?site_locale=en_GB

Reynolds, S. ; Main, C. ; Zrinscak, I. et al. / A study of electronic defects in hydrogenated amorphous silicon prepared by the expanding thermal plasma technique. Amorphous and nanocrystalline silicon-based films-2003. editor / John R. Abelson ; Gautman Ganguly ; Hideki Matsumura ; John Robertson ; Eric A. Schiff. Vol. 762 Materials Research Society, 2003. pp. 143-148 (MRS Symposium Proceedings Series).

@inbook{5eb1ae9843854f80ac141a9a56a360dd,

title = "A study of electronic defects in hydrogenated amorphous silicon prepared by the expanding thermal plasma technique",

author = "S. Reynolds and C. Main and I. Zrinscak and Z. Aneva and D. Nesheva",

note = "Abelson, JR Symposium on Amorphous and Nanocrystalline Silicon-Based Films held at the 2003 MRS Spring Meeting APR 22-25, 2003 SAN FRANCISCO, CALIFORNIA; 2003 MRS Spring Meeting. Symposium on Amorphous and Nanocrystalline Silicon-Based Films ; Conference date: 22-04-2003 Through 25-04-2003",

year = "2003",

language = "English",

isbn = "9781558996991",

volume = "762",

series = "MRS Symposium Proceedings Series",

publisher = "Materials Research Society",

pages = "143--148",

editor = "Abelson, {John R. } and Ganguly, {Gautman } and Matsumura, {Hideki } and Robertson, {John } and Schiff, {Eric A. }",

booktitle = "Amorphous and nanocrystalline silicon-based films-2003",

}

Reynolds, S, Main, C, Zrinscak, I, Aneva, Z & Nesheva, D 2003, A study of electronic defects in hydrogenated amorphous silicon prepared by the expanding thermal plasma technique. in JR Abelson, G Ganguly, H Matsumura, J Robertson & EA Schiff (eds), Amorphous and nanocrystalline silicon-based films-2003. vol. 762, MRS Symposium Proceedings Series, vol. 762, Materials Research Society, pp. 143-148, 2003 MRS Spring Meeting. Symposium on Amorphous and Nanocrystalline Silicon-Based Films , San Francisco, Ca., United States, 22/04/03. <http://www.cambridge.org/gb/knowledge/isbn/item6522577/?site_locale=en_GB>

A study of electronic defects in hydrogenated amorphous silicon prepared by the expanding thermal plasma technique. / Reynolds, S.; Main, C.; Zrinscak, I. et al.
Amorphous and nanocrystalline silicon-based films-2003. ed. / John R. Abelson; Gautman Ganguly; Hideki Matsumura; John Robertson; Eric A. Schiff. Vol. 762 Materials Research Society, 2003. p. 143-148 (MRS Symposium Proceedings Series; Vol. 762).

Research output: Chapter in Book/Report/Conference proceeding › Chapter (peer-reviewed)

TY - CHAP

T1 - A study of electronic defects in hydrogenated amorphous silicon prepared by the expanding thermal plasma technique

AU - Reynolds, S.

AU - Main, C.

AU - Zrinscak, I.

AU - Aneva, Z.

AU - Nesheva, D.

N1 - Abelson, JR Symposium on Amorphous and Nanocrystalline Silicon-Based Films held at the 2003 MRS Spring Meeting APR 22-25, 2003 SAN FRANCISCO, CALIFORNIA

PY - 2003

Y1 - 2003

M3 - Chapter (peer-reviewed)

SN - 9781558996991

VL - 762

T3 - MRS Symposium Proceedings Series

SP - 143

EP - 148

BT - Amorphous and nanocrystalline silicon-based films-2003

A2 - Abelson, John R.

A2 - Ganguly, Gautman

A2 - Matsumura, Hideki

A2 - Robertson, John

A2 - Schiff, Eric A.

PB - Materials Research Society

T2 - 2003 MRS Spring Meeting. Symposium on Amorphous and Nanocrystalline Silicon-Based Films

Y2 - 22 April 2003 through 25 April 2003

ER -

Reynolds S, Main C, Zrinscak I, Aneva Z, Nesheva D. A study of electronic defects in hydrogenated amorphous silicon prepared by the expanding thermal plasma technique. In Abelson JR, Ganguly G, Matsumura H, Robertson J, Schiff EA, editors, Amorphous and nanocrystalline silicon-based films-2003. Vol. 762. Materials Research Society. 2003. p. 143-148. (MRS Symposium Proceedings Series).