Aging effects in microcrystalline silicon films studied by transient photoconductivity

V. Smirnov, S. Reynolds, C. Main, F. Finger, R. Carius

    Research output: Contribution to journalArticlepeer-review

    25 Citations (Scopus)

    Abstract

    Measurements of dark conductivity, steady-state and transient photoconductivity in undoped and boron-doped microcrystalline silicon films exposed to room air are reported. Two aging processes are identified: (i) an increase in dark conductivity and mobility-lifetime product occurring over several days, that may be reversed by heating to 160 °C under vacuum, and subsequently re-cycled, (ii) an irreversible change in the density of states occurring over a period of several months. It is proposed that the reversible effect is associated with charge transport in a region of electron accumulation induced by weakly-adsorbed water, whereas the irreversible effect, identified from its transient photocurrent signature, is associated with a true change in the density of states within the transport path, possibly as a result of slow chemical reactions at silicon grain boundaries.
    Original languageEnglish
    Pages (from-to)421-424
    Number of pages4
    JournalJournal of Non-Crystalline Solids
    Volume338
    DOIs
    Publication statusPublished - Jun 2004

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