All-semiconductor room-temperature terahertz time domain spectrometer

Zakaria Mihoubi, Keith G. Wilcox, Stephen Elsmere, Adrian Quarterman, Rakchanok Rungsawang, Ian Farrer, Harvey E. Beere, David A. Ritchie, Anne Tropper, Vasileios Apostolopoulos (Lead / Corresponding author)

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    35 Citations (Scopus)

    Abstract

    We report what we believe to be the first demonstration of an all-semiconductor room-temperature terahertz time domain spectrometer. An optical Stark mode-locked vertical-external-cavity surface-emitting laser with 480 fs pulses at 1044 nm was used to illuminate low-temperature-grown photoconductive antennae with 5 μm-gap bow-tie-shaped electrodes. The coherently detected spectrum has a bandwidth close to 1 THz, in which water absorption lines at 0.555 and 0.751 THz can be resolved.

    Original languageEnglish
    Pages (from-to)2125-2127
    Number of pages3
    JournalOptics Letters
    Volume33
    Issue number18
    DOIs
    Publication statusPublished - 15 Sep 2008

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  • Cite this

    Mihoubi, Z., Wilcox, K. G., Elsmere, S., Quarterman, A., Rungsawang, R., Farrer, I., Beere, H. E., Ritchie, D. A., Tropper, A., & Apostolopoulos, V. (2008). All-semiconductor room-temperature terahertz time domain spectrometer. Optics Letters, 33(18), 2125-2127. https://doi.org/10.1364/OL.33.002125