All-semiconductor room-temperature terahertz time domain spectrometer

Zakaria Mihoubi, Keith G. Wilcox, Stephen Elsmere, Adrian Quarterman, Rakchanok Rungsawang, Ian Farrer, Harvey E. Beere, David A. Ritchie, Anne Tropper, Vasileios Apostolopoulos (Lead / Corresponding author)

    Research output: Contribution to journalArticle

    34 Citations (Scopus)

    Abstract

    We report what we believe to be the first demonstration of an all-semiconductor room-temperature terahertz time domain spectrometer. An optical Stark mode-locked vertical-external-cavity surface-emitting laser with 480 fs pulses at 1044 nm was used to illuminate low-temperature-grown photoconductive antennae with 5 μm-gap bow-tie-shaped electrodes. The coherently detected spectrum has a bandwidth close to 1 THz, in which water absorption lines at 0.555 and 0.751 THz can be resolved.

    Original languageEnglish
    Pages (from-to)2125-2127
    Number of pages3
    JournalOptics Letters
    Volume33
    Issue number18
    DOIs
    Publication statusPublished - 15 Sep 2008

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    bows
    surface emitting lasers
    antennas
    spectrometers
    bandwidth
    cavities
    electrodes
    room temperature
    pulses
    water

    Cite this

    Mihoubi, Z., Wilcox, K. G., Elsmere, S., Quarterman, A., Rungsawang, R., Farrer, I., ... Apostolopoulos, V. (2008). All-semiconductor room-temperature terahertz time domain spectrometer. Optics Letters, 33(18), 2125-2127. https://doi.org/10.1364/OL.33.002125
    Mihoubi, Zakaria ; Wilcox, Keith G. ; Elsmere, Stephen ; Quarterman, Adrian ; Rungsawang, Rakchanok ; Farrer, Ian ; Beere, Harvey E. ; Ritchie, David A. ; Tropper, Anne ; Apostolopoulos, Vasileios. / All-semiconductor room-temperature terahertz time domain spectrometer. In: Optics Letters. 2008 ; Vol. 33, No. 18. pp. 2125-2127.
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    abstract = "We report what we believe to be the first demonstration of an all-semiconductor room-temperature terahertz time domain spectrometer. An optical Stark mode-locked vertical-external-cavity surface-emitting laser with 480 fs pulses at 1044 nm was used to illuminate low-temperature-grown photoconductive antennae with 5 μm-gap bow-tie-shaped electrodes. The coherently detected spectrum has a bandwidth close to 1 THz, in which water absorption lines at 0.555 and 0.751 THz can be resolved.",
    author = "Zakaria Mihoubi and Wilcox, {Keith G.} and Stephen Elsmere and Adrian Quarterman and Rakchanok Rungsawang and Ian Farrer and Beere, {Harvey E.} and Ritchie, {David A.} and Anne Tropper and Vasileios Apostolopoulos",
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    Mihoubi, Z, Wilcox, KG, Elsmere, S, Quarterman, A, Rungsawang, R, Farrer, I, Beere, HE, Ritchie, DA, Tropper, A & Apostolopoulos, V 2008, 'All-semiconductor room-temperature terahertz time domain spectrometer', Optics Letters, vol. 33, no. 18, pp. 2125-2127. https://doi.org/10.1364/OL.33.002125

    All-semiconductor room-temperature terahertz time domain spectrometer. / Mihoubi, Zakaria; Wilcox, Keith G.; Elsmere, Stephen; Quarterman, Adrian; Rungsawang, Rakchanok; Farrer, Ian; Beere, Harvey E.; Ritchie, David A.; Tropper, Anne; Apostolopoulos, Vasileios (Lead / Corresponding author).

    In: Optics Letters, Vol. 33, No. 18, 15.09.2008, p. 2125-2127.

    Research output: Contribution to journalArticle

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    AU - Mihoubi, Zakaria

    AU - Wilcox, Keith G.

    AU - Elsmere, Stephen

    AU - Quarterman, Adrian

    AU - Rungsawang, Rakchanok

    AU - Farrer, Ian

    AU - Beere, Harvey E.

    AU - Ritchie, David A.

    AU - Tropper, Anne

    AU - Apostolopoulos, Vasileios

    PY - 2008/9/15

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    N2 - We report what we believe to be the first demonstration of an all-semiconductor room-temperature terahertz time domain spectrometer. An optical Stark mode-locked vertical-external-cavity surface-emitting laser with 480 fs pulses at 1044 nm was used to illuminate low-temperature-grown photoconductive antennae with 5 μm-gap bow-tie-shaped electrodes. The coherently detected spectrum has a bandwidth close to 1 THz, in which water absorption lines at 0.555 and 0.751 THz can be resolved.

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    Mihoubi Z, Wilcox KG, Elsmere S, Quarterman A, Rungsawang R, Farrer I et al. All-semiconductor room-temperature terahertz time domain spectrometer. Optics Letters. 2008 Sep 15;33(18):2125-2127. https://doi.org/10.1364/OL.33.002125