Amorphous semiconductors

S. Reynolds, R. E. Belford

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    The research efforts of physical scientists over twenty years have helped to secure a promising commercial future for amorphous semiconductors, in areas as diverse as solar power and sub-micron optics. The authors discuss the formation and stability of amorphous solids, the atomic and electronic structures of Si and Ge, localised and extended states, defects, doping and optical properties including light-induced structural and morphological changes. A field-effect technique for measuring the localised density of states is described and related to thin-film transistor operation.
    Original languageEnglish
    Pages (from-to)193-203
    Number of pages11
    JournalPhysics in Technology
    Volume18
    Issue number5
    DOIs
    Publication statusPublished - 1987

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