Modulated and Fourier-transformed transient photocurrent (MPC and TPC-FT) spectroscopies have been evaluated through a study of the density and capture properties of localised states in as-prepared and light-soaked PECVD a-Si:H samples over a range of temperatures and optical excitations. Both techniques return a conduction band tail state characteristic energy of approximately 22 meV. However, defect state spectra differ in detail and are strongly influenced by dc optical excitation. A feature correlating with the quasi-Fermi level position is observed, but the capture coefficient implied (of order 10-6 cm3 s-1) is some two orders greater than that calculated from thermal activation of emission frequencies. Such a value would suggest an implausibly low absolute density of defects. Possible explanations are briefly discussed and additional investigations proposed.
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