Analysis of post-transit photocurrent-time data by application of Tikhonov regularization

M. J. Gueorguieva, C. Main, S. Reynolds

    Research output: Chapter in Book/Report/Conference proceedingChapter (peer-reviewed)

    Abstract

    A novel method for analysing post-transit photocurrent-time data using Tikhonov regularization is presented. The multiple-trapping rate equations are solved exactly in the time domain, avoiding certain mathematical approximations and numerical inaccuracies associated with approaches based on Laplace or Fourier transformations. Photocurrent decays simulated from discrete levels and model density of states (DOS) distributions are used to assess performance and to compare accuracy and resolution with existing methods. The technique is also shown to be effective as a practical DOS spectroscopy by application to experimental post-transit decays obtained from an amorphous silicon pin diode.
    Original languageEnglish
    Title of host publicationAmorphous and heterogeneous silicon-based films--2002
    Subtitle of host publicationsymposium held April 2-5, 2002, San Francisco, California, U.S.A.
    EditorsJ. David Cohen
    Place of PublicationWarrendale, Pennsylvania
    PublisherMaterials Research Society
    Pages339-344
    Number of pages6
    ISBN (Print)1558996516, 9781558996519
    Publication statusPublished - 2002

    Publication series

    NameMaterials Research Society symposium proceedings
    Volume715

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  • Cite this

    Gueorguieva, M. J., Main, C., & Reynolds, S. (2002). Analysis of post-transit photocurrent-time data by application of Tikhonov regularization. In J. D. Cohen (Ed.), Amorphous and heterogeneous silicon-based films--2002: symposium held April 2-5, 2002, San Francisco, California, U.S.A. (pp. 339-344). (Materials Research Society symposium proceedings; Vol. 715). Materials Research Society. http://www.cambridge.org/asia/catalogue/catalogue.asp?isbn=9781558996519