Analysis of post-transit photocurrent-time data by application of Tikhonov regularization

M. J. Gueorguieva; C. Main; S. Reynolds

Analysis of post-transit photocurrent-time data by application of Tikhonov regularization

M. J. Gueorguieva, C. Main, S. Reynolds

Research output: Chapter in Book/Report/Conference proceeding › Chapter (peer-reviewed)

Abstract

A novel method for analysing post-transit photocurrent-time data using Tikhonov regularization is presented. The multiple-trapping rate equations are solved exactly in the time domain, avoiding certain mathematical approximations and numerical inaccuracies associated with approaches based on Laplace or Fourier transformations. Photocurrent decays simulated from discrete levels and model density of states (DOS) distributions are used to assess performance and to compare accuracy and resolution with existing methods. The technique is also shown to be effective as a practical DOS spectroscopy by application to experimental post-transit decays obtained from an amorphous silicon pin diode.

Original language	English
Title of host publication	Amorphous and heterogeneous silicon-based films--2002
Subtitle of host publication	symposium held April 2-5, 2002, San Francisco, California, U.S.A.
Editors	J. David Cohen
Place of Publication	Warrendale, Pennsylvania
Publisher	Materials Research Society
Pages	339-344
Number of pages	6
ISBN (Print)	1558996516, 9781558996519
Publication status	Published - 2002

Publication series

Name	Materials Research Society symposium proceedings
Volume	715

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Cite this

Gueorguieva, M. J., Main, C., & Reynolds, S. (2002). Analysis of post-transit photocurrent-time data by application of Tikhonov regularization. In J. D. Cohen (Ed.), Amorphous and heterogeneous silicon-based films--2002: symposium held April 2-5, 2002, San Francisco, California, U.S.A. (pp. 339-344). (Materials Research Society symposium proceedings; Vol. 715). Materials Research Society. http://www.cambridge.org/asia/catalogue/catalogue.asp?isbn=9781558996519

Gueorguieva, M. J. ; Main, C. ; Reynolds, S. / Analysis of post-transit photocurrent-time data by application of Tikhonov regularization. Amorphous and heterogeneous silicon-based films--2002: symposium held April 2-5, 2002, San Francisco, California, U.S.A.. editor / J. David Cohen. Warrendale, Pennsylvania : Materials Research Society, 2002. pp. 339-344 (Materials Research Society symposium proceedings).

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title = "Analysis of post-transit photocurrent-time data by application of Tikhonov regularization",

abstract = "A novel method for analysing post-transit photocurrent-time data using Tikhonov regularization is presented. The multiple-trapping rate equations are solved exactly in the time domain, avoiding certain mathematical approximations and numerical inaccuracies associated with approaches based on Laplace or Fourier transformations. Photocurrent decays simulated from discrete levels and model density of states (DOS) distributions are used to assess performance and to compare accuracy and resolution with existing methods. The technique is also shown to be effective as a practical DOS spectroscopy by application to experimental post-transit decays obtained from an amorphous silicon pin diode.",

author = "Gueorguieva, {M. J.} and C. Main and S. Reynolds",

year = "2002",

language = "English",

isbn = "1558996516",

series = "Materials Research Society symposium proceedings",

publisher = "Materials Research Society",

pages = "339--344",

editor = "Cohen, {J. David}",

booktitle = "Amorphous and heterogeneous silicon-based films--2002",

}

Gueorguieva, MJ, Main, C & Reynolds, S 2002, Analysis of post-transit photocurrent-time data by application of Tikhonov regularization. in JD Cohen (ed.), Amorphous and heterogeneous silicon-based films--2002: symposium held April 2-5, 2002, San Francisco, California, U.S.A.. Materials Research Society symposium proceedings, vol. 715, Materials Research Society, Warrendale, Pennsylvania, pp. 339-344. <http://www.cambridge.org/asia/catalogue/catalogue.asp?isbn=9781558996519>

Analysis of post-transit photocurrent-time data by application of Tikhonov regularization. / Gueorguieva, M. J.; Main, C.; Reynolds, S.
Amorphous and heterogeneous silicon-based films--2002: symposium held April 2-5, 2002, San Francisco, California, U.S.A.. ed. / J. David Cohen. Warrendale, Pennsylvania: Materials Research Society, 2002. p. 339-344 (Materials Research Society symposium proceedings; Vol. 715).

Research output: Chapter in Book/Report/Conference proceeding › Chapter (peer-reviewed)

TY - CHAP

T1 - Analysis of post-transit photocurrent-time data by application of Tikhonov regularization

AU - Gueorguieva, M. J.

AU - Main, C.

AU - Reynolds, S.

PY - 2002

Y1 - 2002

N2 - A novel method for analysing post-transit photocurrent-time data using Tikhonov regularization is presented. The multiple-trapping rate equations are solved exactly in the time domain, avoiding certain mathematical approximations and numerical inaccuracies associated with approaches based on Laplace or Fourier transformations. Photocurrent decays simulated from discrete levels and model density of states (DOS) distributions are used to assess performance and to compare accuracy and resolution with existing methods. The technique is also shown to be effective as a practical DOS spectroscopy by application to experimental post-transit decays obtained from an amorphous silicon pin diode.

AB - A novel method for analysing post-transit photocurrent-time data using Tikhonov regularization is presented. The multiple-trapping rate equations are solved exactly in the time domain, avoiding certain mathematical approximations and numerical inaccuracies associated with approaches based on Laplace or Fourier transformations. Photocurrent decays simulated from discrete levels and model density of states (DOS) distributions are used to assess performance and to compare accuracy and resolution with existing methods. The technique is also shown to be effective as a practical DOS spectroscopy by application to experimental post-transit decays obtained from an amorphous silicon pin diode.

M3 - Chapter (peer-reviewed)

SN - 1558996516

SN - 9781558996519

T3 - Materials Research Society symposium proceedings

SP - 339

EP - 344

BT - Amorphous and heterogeneous silicon-based films--2002

A2 - Cohen, J. David

PB - Materials Research Society

CY - Warrendale, Pennsylvania

ER -

Gueorguieva MJ, Main C, Reynolds S. Analysis of post-transit photocurrent-time data by application of Tikhonov regularization. In Cohen JD, editor, Amorphous and heterogeneous silicon-based films--2002: symposium held April 2-5, 2002, San Francisco, California, U.S.A.. Warrendale, Pennsylvania: Materials Research Society. 2002. p. 339-344. (Materials Research Society symposium proceedings).

Analysis of post-transit photocurrent-time data by application of Tikhonov regularization

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