A novel method for analysing post-transit photocurrent-time data using Tikhonov regularization is presented. The multiple-trapping rate equations are solved exactly in the time domain, avoiding certain mathematical approximations and numerical inaccuracies associated with approaches based on Laplace or Fourier transformations. Photocurrent decays simulated from discrete levels and model density of states (DOS) distributions are used to assess performance and to compare accuracy and resolution with existing methods. The technique is also shown to be effective as a practical DOS spectroscopy by application to experimental post-transit decays obtained from an amorphous silicon pin diode.
|Title of host publication
|Amorphous and heterogeneous silicon-based films--2002
|Subtitle of host publication
|symposium held April 2-5, 2002, San Francisco, California, U.S.A.
|J. David Cohen
|Place of Publication
|Materials Research Society
|Number of pages
|Published - 2002
|Materials Research Society symposium proceedings