Anomalous high zero bias resistance in metal - amorphous silicon - metal structures

S. M. Gage, J. Hajto, S. Reynolds, W. K. Choi, M. J. Rose, P. G. Lecomber, A. J. Snell, A. E. Owen

    Research output: Contribution to journalArticlepeer-review

    10 Citations (Scopus)


    It has been demonstrated previously that metal-amorphous silicon-metal thin film structures exhibit non-volatile polarity dependent memory switching after initial conditioning, or ‘forming’, by means of a high applied potential. Under certain circumstances conduction in the formed device is associated with a highly conducting filament. The physical nature of the filament is, however, largely unknown. This paper describes the low temperature conductivity behaviour of such formed memory structures, and analyses this in terms of possible metal incorporation in the filamentary region.
    Original languageEnglish
    Pages (from-to)171-173
    Number of pages3
    JournalJournal of Non-Crystalline Solids
    Issue number1-3
    Publication statusPublished - 1989


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