Atmospheric adsorption effects in hot-wire chemical-vapor-deposition microcrystalline silicon films with different electrode configurations

S. K. Persheyev, V. Smirnov, K. A. O'Neill, S. Reynolds, M. J. Rose

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    Hot-wire chemical-vapor-disposition (CVD) thin silicon films are studied by means of dark conductivity, FTIR, hydrogen evolution, and SEM surface characterization. Three types of metastability are observed: (1) long term irreversible degradation due to oxidization processes on the film surface, (2) reversible degradation determined by uncontrolled water and/or oxygen adsorption, and (3) a fast field-switching effect in the film bulk. We propose that this effect is associated with the morphology changes during film growth and an electrical field induced by adsorbed atmospheric components on the film surface. It is found that metastable processes close to the film surface are stronger than in the bulk.
    Original languageEnglish
    Pages (from-to)343-346
    Number of pages4
    JournalSemiconductors
    Volume39
    Issue number3
    DOIs
    Publication statusPublished - 2005

    Fingerprint

    Microcrystalline silicon
    silicon films
    Chemical vapor deposition
    vapor deposition
    wire
    Wire
    Adsorption
    Electrodes
    adsorption
    electrodes
    configurations
    degradation
    Degradation
    Silicon
    Film growth
    metastable state
    Hydrogen
    Vapors
    vapors
    Oxygen

    Cite this

    @article{ac3e3503fa1643729fa865b5f235070a,
    title = "Atmospheric adsorption effects in hot-wire chemical-vapor-deposition microcrystalline silicon films with different electrode configurations",
    abstract = "Hot-wire chemical-vapor-disposition (CVD) thin silicon films are studied by means of dark conductivity, FTIR, hydrogen evolution, and SEM surface characterization. Three types of metastability are observed: (1) long term irreversible degradation due to oxidization processes on the film surface, (2) reversible degradation determined by uncontrolled water and/or oxygen adsorption, and (3) a fast field-switching effect in the film bulk. We propose that this effect is associated with the morphology changes during film growth and an electrical field induced by adsorbed atmospheric components on the film surface. It is found that metastable processes close to the film surface are stronger than in the bulk.",
    author = "Persheyev, {S. K.} and V. Smirnov and O'Neill, {K. A.} and S. Reynolds and Rose, {M. J.}",
    year = "2005",
    doi = "10.1134/1.1882798",
    language = "English",
    volume = "39",
    pages = "343--346",
    journal = "Semiconductors",
    issn = "1063-7826",
    publisher = "MAIK Nauka/Interperiodica",
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    }

    Atmospheric adsorption effects in hot-wire chemical-vapor-deposition microcrystalline silicon films with different electrode configurations. / Persheyev, S. K.; Smirnov, V.; O'Neill, K. A.; Reynolds, S.; Rose, M. J.

    In: Semiconductors, Vol. 39, No. 3, 2005, p. 343-346.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - Atmospheric adsorption effects in hot-wire chemical-vapor-deposition microcrystalline silicon films with different electrode configurations

    AU - Persheyev, S. K.

    AU - Smirnov, V.

    AU - O'Neill, K. A.

    AU - Reynolds, S.

    AU - Rose, M. J.

    PY - 2005

    Y1 - 2005

    N2 - Hot-wire chemical-vapor-disposition (CVD) thin silicon films are studied by means of dark conductivity, FTIR, hydrogen evolution, and SEM surface characterization. Three types of metastability are observed: (1) long term irreversible degradation due to oxidization processes on the film surface, (2) reversible degradation determined by uncontrolled water and/or oxygen adsorption, and (3) a fast field-switching effect in the film bulk. We propose that this effect is associated with the morphology changes during film growth and an electrical field induced by adsorbed atmospheric components on the film surface. It is found that metastable processes close to the film surface are stronger than in the bulk.

    AB - Hot-wire chemical-vapor-disposition (CVD) thin silicon films are studied by means of dark conductivity, FTIR, hydrogen evolution, and SEM surface characterization. Three types of metastability are observed: (1) long term irreversible degradation due to oxidization processes on the film surface, (2) reversible degradation determined by uncontrolled water and/or oxygen adsorption, and (3) a fast field-switching effect in the film bulk. We propose that this effect is associated with the morphology changes during film growth and an electrical field induced by adsorbed atmospheric components on the film surface. It is found that metastable processes close to the film surface are stronger than in the bulk.

    U2 - 10.1134/1.1882798

    DO - 10.1134/1.1882798

    M3 - Article

    VL - 39

    SP - 343

    EP - 346

    JO - Semiconductors

    JF - Semiconductors

    SN - 1063-7826

    IS - 3

    ER -