Atmospheric adsorption effects in hot-wire chemical-vapor-deposition microcrystalline silicon films with different electrode configurations

S. K. Persheyev; V. Smirnov; K. A. O'Neill; S. Reynolds; M. J. Rose

doi:10.1134/1.1882798

Atmospheric adsorption effects in hot-wire chemical-vapor-deposition microcrystalline silicon films with different electrode configurations

S. K. Persheyev, V. Smirnov, K. A. O'Neill, S. Reynolds, M. J. Rose

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Hot-wire chemical-vapor-disposition (CVD) thin silicon films are studied by means of dark conductivity, FTIR, hydrogen evolution, and SEM surface characterization. Three types of metastability are observed: (1) long term irreversible degradation due to oxidization processes on the film surface, (2) reversible degradation determined by uncontrolled water and/or oxygen adsorption, and (3) a fast field-switching effect in the film bulk. We propose that this effect is associated with the morphology changes during film growth and an electrical field induced by adsorbed atmospheric components on the film surface. It is found that metastable processes close to the film surface are stronger than in the bulk.

Original language	English
Pages (from-to)	343-346
Number of pages	4
Journal	Semiconductors
Volume	39
Issue number	3
DOIs	https://doi.org/10.1134/1.1882798
Publication status	Published - 2005

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title = "Atmospheric adsorption effects in hot-wire chemical-vapor-deposition microcrystalline silicon films with different electrode configurations",

abstract = "Hot-wire chemical-vapor-disposition (CVD) thin silicon films are studied by means of dark conductivity, FTIR, hydrogen evolution, and SEM surface characterization. Three types of metastability are observed: (1) long term irreversible degradation due to oxidization processes on the film surface, (2) reversible degradation determined by uncontrolled water and/or oxygen adsorption, and (3) a fast field-switching effect in the film bulk. We propose that this effect is associated with the morphology changes during film growth and an electrical field induced by adsorbed atmospheric components on the film surface. It is found that metastable processes close to the film surface are stronger than in the bulk.",

author = "Persheyev, {S. K.} and V. Smirnov and O'Neill, {K. A.} and S. Reynolds and Rose, {M. J.}",

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T1 - Atmospheric adsorption effects in hot-wire chemical-vapor-deposition microcrystalline silicon films with different electrode configurations

AU - Persheyev, S. K.

AU - Smirnov, V.

AU - O'Neill, K. A.

AU - Reynolds, S.

AU - Rose, M. J.

PY - 2005

Y1 - 2005

N2 - Hot-wire chemical-vapor-disposition (CVD) thin silicon films are studied by means of dark conductivity, FTIR, hydrogen evolution, and SEM surface characterization. Three types of metastability are observed: (1) long term irreversible degradation due to oxidization processes on the film surface, (2) reversible degradation determined by uncontrolled water and/or oxygen adsorption, and (3) a fast field-switching effect in the film bulk. We propose that this effect is associated with the morphology changes during film growth and an electrical field induced by adsorbed atmospheric components on the film surface. It is found that metastable processes close to the film surface are stronger than in the bulk.

AB - Hot-wire chemical-vapor-disposition (CVD) thin silicon films are studied by means of dark conductivity, FTIR, hydrogen evolution, and SEM surface characterization. Three types of metastability are observed: (1) long term irreversible degradation due to oxidization processes on the film surface, (2) reversible degradation determined by uncontrolled water and/or oxygen adsorption, and (3) a fast field-switching effect in the film bulk. We propose that this effect is associated with the morphology changes during film growth and an electrical field induced by adsorbed atmospheric components on the film surface. It is found that metastable processes close to the film surface are stronger than in the bulk.

U2 - 10.1134/1.1882798

DO - 10.1134/1.1882798

M3 - Article

SN - 1090-6479

VL - 39

SP - 343

EP - 346

JO - Semiconductors

JF - Semiconductors

IS - 3

ER -

Atmospheric adsorption effects in hot-wire chemical-vapor-deposition microcrystalline silicon films with different electrode configurations

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