Broadband absorption bleaching in chirped InGaAs quantum dot semiconductor optical amplifier operating at 1211-1285 nm

E. Jelmakas; R. Tomašiunas; M. Vengris; E. Rafailov; I. Krestnikov

doi:10.1016/j.optmat.2013.05.042

Broadband absorption bleaching in chirped InGaAs quantum dot semiconductor optical amplifier operating at 1211-1285 nm

E. Jelmakas, R. Tomašiunas, M. Vengris, E. Rafailov, I. Krestnikov

Research output: Contribution to journal › Article › peer-review

Abstract

We report on photoinduced absorption bleaching of InAs/InGaAs chirped quantum dot semiconductor optical amplifier (QD SOA) waveguide devices investigated by the traditional femtosecond pump-probe technique applied for a waveguide configuration. To gain broader spectra for the device a chirped QD structure including three groups of quantum dots each dedicated to a ground state transition at wavelength 1285, 1243 and 1211 nm was designed. Photoinduced transmission spectra consisting of ground state transition for the groups of QD's involved showed coincidence with the electroluminescence spectra and even more exceeded to longer wavelength. From photoinduced transmission kinetics absorption recovery in the range of picoseconds was considered. For comparison a device with typical high photoinduced absorption demonstrating large suppression of absorption bleaching was shown and interpreted.

Original language	English
Pages (from-to)	2171-2174
Number of pages	4
Journal	Optical Materials
Volume	35
Issue number	12
DOIs	https://doi.org/10.1016/j.optmat.2013.05.042
Publication status	Published - Oct 2013

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title = "Broadband absorption bleaching in chirped InGaAs quantum dot semiconductor optical amplifier operating at 1211-1285 nm",

abstract = "We report on photoinduced absorption bleaching of InAs/InGaAs chirped quantum dot semiconductor optical amplifier (QD SOA) waveguide devices investigated by the traditional femtosecond pump-probe technique applied for a waveguide configuration. To gain broader spectra for the device a chirped QD structure including three groups of quantum dots each dedicated to a ground state transition at wavelength 1285, 1243 and 1211 nm was designed. Photoinduced transmission spectra consisting of ground state transition for the groups of QD's involved showed coincidence with the electroluminescence spectra and even more exceeded to longer wavelength. From photoinduced transmission kinetics absorption recovery in the range of picoseconds was considered. For comparison a device with typical high photoinduced absorption demonstrating large suppression of absorption bleaching was shown and interpreted.",

author = "E. Jelmakas and R. Toma{\v s}iunas and M. Vengris and E. Rafailov and I. Krestnikov",

year = "2013",

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T1 - Broadband absorption bleaching in chirped InGaAs quantum dot semiconductor optical amplifier operating at 1211-1285 nm

AU - Jelmakas, E.

AU - Tomašiunas, R.

AU - Vengris, M.

AU - Rafailov, E.

AU - Krestnikov, I.

PY - 2013/10

Y1 - 2013/10

N2 - We report on photoinduced absorption bleaching of InAs/InGaAs chirped quantum dot semiconductor optical amplifier (QD SOA) waveguide devices investigated by the traditional femtosecond pump-probe technique applied for a waveguide configuration. To gain broader spectra for the device a chirped QD structure including three groups of quantum dots each dedicated to a ground state transition at wavelength 1285, 1243 and 1211 nm was designed. Photoinduced transmission spectra consisting of ground state transition for the groups of QD's involved showed coincidence with the electroluminescence spectra and even more exceeded to longer wavelength. From photoinduced transmission kinetics absorption recovery in the range of picoseconds was considered. For comparison a device with typical high photoinduced absorption demonstrating large suppression of absorption bleaching was shown and interpreted.

AB - We report on photoinduced absorption bleaching of InAs/InGaAs chirped quantum dot semiconductor optical amplifier (QD SOA) waveguide devices investigated by the traditional femtosecond pump-probe technique applied for a waveguide configuration. To gain broader spectra for the device a chirped QD structure including three groups of quantum dots each dedicated to a ground state transition at wavelength 1285, 1243 and 1211 nm was designed. Photoinduced transmission spectra consisting of ground state transition for the groups of QD's involved showed coincidence with the electroluminescence spectra and even more exceeded to longer wavelength. From photoinduced transmission kinetics absorption recovery in the range of picoseconds was considered. For comparison a device with typical high photoinduced absorption demonstrating large suppression of absorption bleaching was shown and interpreted.

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DO - 10.1016/j.optmat.2013.05.042

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SP - 2171

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JO - Optical Materials

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Broadband absorption bleaching in chirped InGaAs quantum dot semiconductor optical amplifier operating at 1211-1285 nm

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