Broadly Tunable InGaAsP-InP Strained Multiquantum-Well External Cavity Diode Laser

Ksenia A. Fedorova, Maria Ana Cataluna, Igor Kudryashov, Victor Khalfin, Edik U. Rafailov

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)


    In this letter, we demonstrate a broadly tunable InGaAs-InP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 1494-1667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.

    Original languageEnglish
    Pages (from-to)1205-1207
    Number of pages3
    JournalIEEE Photonics Technology Letters
    Issue number16
    Publication statusPublished - 15 Aug 2010


    • Quantum-well (QW) lasers
    • semiconductor lasers

    Cite this