Broadly Tunable InGaAsP-InP Strained Multiquantum-Well External Cavity Diode Laser

Ksenia A. Fedorova; Maria Ana Cataluna; Igor Kudryashov; Victor Khalfin; Edik U. Rafailov

doi:10.1109/LPT.2010.2051661

Broadly Tunable InGaAsP-InP Strained Multiquantum-Well External Cavity Diode Laser

Ksenia A. Fedorova, Maria Ana Cataluna, Igor Kudryashov, Victor Khalfin, Edik U. Rafailov

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In this letter, we demonstrate a broadly tunable InGaAs-InP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 1494-1667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.

Original language	English
Pages (from-to)	1205-1207
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	16
DOIs	https://doi.org/10.1109/LPT.2010.2051661
Publication status	Published - 15 Aug 2010

Keywords

Quantum-well (QW) lasers
semiconductor lasers

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10.1109/LPT.2010.2051661

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title = "Broadly Tunable InGaAsP-InP Strained Multiquantum-Well External Cavity Diode Laser",

abstract = "In this letter, we demonstrate a broadly tunable InGaAs-InP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 1494-1667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.",

keywords = "Quantum-well (QW) lasers, semiconductor lasers",

author = "Fedorova, {Ksenia A.} and Cataluna, {Maria Ana} and Igor Kudryashov and Victor Khalfin and Rafailov, {Edik U.}",

year = "2010",

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language = "English",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Broadly Tunable InGaAsP-InP Strained Multiquantum-Well External Cavity Diode Laser

AU - Fedorova, Ksenia A.

AU - Cataluna, Maria Ana

AU - Kudryashov, Igor

AU - Khalfin, Victor

AU - Rafailov, Edik U.

PY - 2010/8/15

Y1 - 2010/8/15

N2 - In this letter, we demonstrate a broadly tunable InGaAs-InP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 1494-1667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.

AB - In this letter, we demonstrate a broadly tunable InGaAs-InP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 1494-1667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.

KW - Quantum-well (QW) lasers

KW - semiconductor lasers

U2 - 10.1109/LPT.2010.2051661

DO - 10.1109/LPT.2010.2051661

M3 - Article

SN - 1041-1135

VL - 22

SP - 1205

EP - 1207

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 16

ER -

Broadly Tunable InGaAsP-InP Strained Multiquantum-Well External Cavity Diode Laser

Abstract

Keywords

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