Broadly Tunable InGaAsP-InP Strained Multiquantum-Well External Cavity Diode Laser

Ksenia A. Fedorova, Maria Ana Cataluna, Igor Kudryashov, Victor Khalfin, Edik U. Rafailov

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    In this letter, we demonstrate a broadly tunable InGaAs-InP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 1494-1667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.

    Original languageEnglish
    Pages (from-to)1205-1207
    Number of pages3
    JournalIEEE Photonics Technology Letters
    Volume22
    Issue number16
    DOIs
    Publication statusPublished - 15 Aug 2010

    Keywords

    • Quantum-well (QW) lasers
    • semiconductor lasers

    Cite this

    Fedorova, Ksenia A. ; Cataluna, Maria Ana ; Kudryashov, Igor ; Khalfin, Victor ; Rafailov, Edik U. / Broadly Tunable InGaAsP-InP Strained Multiquantum-Well External Cavity Diode Laser. In: IEEE Photonics Technology Letters. 2010 ; Vol. 22, No. 16. pp. 1205-1207.
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    abstract = "In this letter, we demonstrate a broadly tunable InGaAs-InP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 1494-1667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.",
    keywords = "Quantum-well (QW) lasers, semiconductor lasers",
    author = "Fedorova, {Ksenia A.} and Cataluna, {Maria Ana} and Igor Kudryashov and Victor Khalfin and Rafailov, {Edik U.}",
    year = "2010",
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    Broadly Tunable InGaAsP-InP Strained Multiquantum-Well External Cavity Diode Laser. / Fedorova, Ksenia A.; Cataluna, Maria Ana; Kudryashov, Igor; Khalfin, Victor; Rafailov, Edik U.

    In: IEEE Photonics Technology Letters, Vol. 22, No. 16, 15.08.2010, p. 1205-1207.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - Broadly Tunable InGaAsP-InP Strained Multiquantum-Well External Cavity Diode Laser

    AU - Fedorova, Ksenia A.

    AU - Cataluna, Maria Ana

    AU - Kudryashov, Igor

    AU - Khalfin, Victor

    AU - Rafailov, Edik U.

    PY - 2010/8/15

    Y1 - 2010/8/15

    N2 - In this letter, we demonstrate a broadly tunable InGaAs-InP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 1494-1667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.

    AB - In this letter, we demonstrate a broadly tunable InGaAs-InP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 1494-1667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.

    KW - Quantum-well (QW) lasers

    KW - semiconductor lasers

    U2 - 10.1109/LPT.2010.2051661

    DO - 10.1109/LPT.2010.2051661

    M3 - Article

    VL - 22

    SP - 1205

    EP - 1207

    JO - IEEE Photonics Technology Letters

    JF - IEEE Photonics Technology Letters

    SN - 1041-1135

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    ER -