Carrier mobility, band tails and defects in microcrystalline silicon

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    6 Citations (Scopus)

    Abstract

    The development of microcrystalline silicon thin films and devices is briefly reviewed. Transport mechanisms, and the attendant key parameters of carrier mobility, band-tail width and defect density, are linked to film structure and composition. In particular we discuss the wide (but systematic) variations in time-of-flight mobility and its unusual field-dependence. While microcrystalline silicon remains an inferior semiconductor to single-crystal silicon, we propose, and support by means of a computer model, that present device-grade material may be of sufficient quality to justify re-examining whether useful thin-film bipolar devices might be developed. These could find application as more sensitive photo-detectors, and as current drivers in organic LED displays and logic circuits.

    Original languageEnglish
    Title of host publication16 Iscmp: Progress in Solid State and Molecular Electronics, Ionics and Photonics
    EditorsD DimovaMalinovska, D Nesheva, AG Petrov, MT Primatarowa
    Place of PublicationBristol
    PublisherIOP Publishing Ltd.
    Pages-
    Number of pages12
    ISBN (Print)*****************
    DOIs
    Publication statusPublished - 2010
    Event16th International School on Condensed Matter Physics Meeting - Varna, Bulgaria
    Duration: 29 Aug 20103 Sep 2010

    Conference

    Conference16th International School on Condensed Matter Physics Meeting
    Abbreviated title16 ISCMP
    CountryBulgaria
    CityVarna
    Period29/08/103/09/10

    Cite this

    Reynolds, S. (2010). Carrier mobility, band tails and defects in microcrystalline silicon. In D. DimovaMalinovska, D. Nesheva, AG. Petrov, & MT. Primatarowa (Eds.), 16 Iscmp: Progress in Solid State and Molecular Electronics, Ionics and Photonics (pp. -). IOP Publishing Ltd.. https://doi.org/10.1088/1742-6596/253/1/012002