Abstract
The development of microcrystalline silicon thin films and devices is briefly reviewed. Transport mechanisms, and the attendant key parameters of carrier mobility, band-tail width and defect density, are linked to film structure and composition. In particular we discuss the wide (but systematic) variations in time-of-flight mobility and its unusual field-dependence. While microcrystalline silicon remains an inferior semiconductor to single-crystal silicon, we propose, and support by means of a computer model, that present device-grade material may be of sufficient quality to justify re-examining whether useful thin-film bipolar devices might be developed. These could find application as more sensitive photo-detectors, and as current drivers in organic LED displays and logic circuits.
Original language | English |
---|---|
Title of host publication | 16 Iscmp: Progress in Solid State and Molecular Electronics, Ionics and Photonics |
Editors | D DimovaMalinovska, D Nesheva, AG Petrov, MT Primatarowa |
Place of Publication | Bristol |
Publisher | IOP Publishing Ltd. |
Pages | - |
Number of pages | 12 |
ISBN (Print) | ***************** |
DOIs | |
Publication status | Published - 2010 |
Event | 16th International School on Condensed Matter Physics Meeting - Varna, Bulgaria Duration: 29 Aug 2010 → 3 Sept 2010 |
Conference
Conference | 16th International School on Condensed Matter Physics Meeting |
---|---|
Abbreviated title | 16 ISCMP |
Country/Territory | Bulgaria |
City | Varna |
Period | 29/08/10 → 3/09/10 |