Abstract
The development of microcrystalline silicon thin films and devices is briefly reviewed. Transport mechanisms, and the attendant key parameters of carrier mobility, band-tail width and defect density, are linked to film structure and composition. In particular we discuss the wide (but systematic) variations in time-of-flight mobility and its unusual field-dependence. While microcrystalline silicon remains an inferior semiconductor to single-crystal silicon, we propose, and support by means of a computer model, that present device-grade material may be of sufficient quality to justify re-examining whether useful thin-film bipolar devices might be developed. These could find application as more sensitive photo-detectors, and as current drivers in organic LED displays and logic circuits.
| Original language | English |
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| Title of host publication | 16 Iscmp: Progress in Solid State and Molecular Electronics, Ionics and Photonics |
| Editors | D DimovaMalinovska, D Nesheva, AG Petrov, MT Primatarowa |
| Place of Publication | Bristol |
| Publisher | IOP Publishing Ltd. |
| Pages | - |
| Number of pages | 12 |
| ISBN (Print) | ***************** |
| DOIs | |
| Publication status | Published - 2010 |
| Event | 16th International School on Condensed Matter Physics Meeting - Varna, Bulgaria Duration: 29 Aug 2010 → 3 Sept 2010 |
Conference
| Conference | 16th International School on Condensed Matter Physics Meeting |
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| Abbreviated title | 16 ISCMP |
| Country/Territory | Bulgaria |
| City | Varna |
| Period | 29/08/10 → 3/09/10 |