Characterization of nickel germanide thin films for use as contacts to p-channel germanium MOSFETs

John Y. Spann; Robert A. Anderson; Trevor J. Thornton; Gari Harris; Shawn G. Thomas; Clarence Tracy

doi:10.1109/LED.2004.842653

Characterization of nickel germanide thin films for use as contacts to p-channel germanium MOSFETs

John Y. Spann, Robert A. Anderson, Trevor J. Thornton, Gari Harris, Shawn G. Thomas, Clarence Tracy

Research output: Contribution to journal › Article › peer-review

80 Citations (Scopus)

Abstract

We have measured the physical properties and resistivity of nickel germanide thin films formed by the rapid thermal annealing of nickel metal on p-type germanium substrates. Rutherford back scattering and high-resolution electron diffraction confirm that the stoichiometry of the resulting nickel germanide film corresponds to NiGe and has an orthorhombic unit cell with dimensions comparable to that of bulk samples. Transmission electron microscopy shows a poly-crystalline film structure with grain size > 0.1 µm. The resistivity values for films annealed in the range 350°C-500°C are comparable to those of metal silicides. Measurements of the specific contact resistance suggest that values approaching 2 × 10-7 O.cm2 can be realized using NiGe formed on heavily doped p-type germanium.

Original language	English
Pages (from-to)	151-153
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	3
DOIs	https://doi.org/10.1109/LED.2004.842653
Publication status	Published - Mar 2005

Keywords

MOSFET
Rutherford backscattering
Contact resistance
Electrical conductivity
Electron diffraction
Germanium compounds
Nickel compounds
Semiconductor thin films

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10.1109/LED.2004.842653

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title = "Characterization of nickel germanide thin films for use as contacts to p-channel germanium MOSFETs",

abstract = "We have measured the physical properties and resistivity of nickel germanide thin films formed by the rapid thermal annealing of nickel metal on p-type germanium substrates. Rutherford back scattering and high-resolution electron diffraction confirm that the stoichiometry of the resulting nickel germanide film corresponds to NiGe and has an orthorhombic unit cell with dimensions comparable to that of bulk samples. Transmission electron microscopy shows a poly-crystalline film structure with grain size > 0.1 µm. The resistivity values for films annealed in the range 350°C-500°C are comparable to those of metal silicides. Measurements of the specific contact resistance suggest that values approaching 2 × 10-7 O.cm2 can be realized using NiGe formed on heavily doped p-type germanium.",

keywords = "MOSFET, Rutherford backscattering, Contact resistance, Electrical conductivity, Electron diffraction, Germanium compounds, Nickel compounds, Semiconductor thin films",

author = "Spann, {John Y.} and Anderson, {Robert A.} and Thornton, {Trevor J.} and Gari Harris and Thomas, {Shawn G.} and Clarence Tracy",

note = " dc.publisher: Institute of Electrical and Electronics Engineers ",

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doi = "10.1109/LED.2004.842653",

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TY - JOUR

T1 - Characterization of nickel germanide thin films for use as contacts to p-channel germanium MOSFETs

AU - Spann, John Y.

AU - Anderson, Robert A.

AU - Thornton, Trevor J.

AU - Harris, Gari

AU - Thomas, Shawn G.

AU - Tracy, Clarence

N1 - dc.publisher: Institute of Electrical and Electronics Engineers

PY - 2005/3

Y1 - 2005/3

N2 - We have measured the physical properties and resistivity of nickel germanide thin films formed by the rapid thermal annealing of nickel metal on p-type germanium substrates. Rutherford back scattering and high-resolution electron diffraction confirm that the stoichiometry of the resulting nickel germanide film corresponds to NiGe and has an orthorhombic unit cell with dimensions comparable to that of bulk samples. Transmission electron microscopy shows a poly-crystalline film structure with grain size > 0.1 µm. The resistivity values for films annealed in the range 350°C-500°C are comparable to those of metal silicides. Measurements of the specific contact resistance suggest that values approaching 2 × 10-7 O.cm2 can be realized using NiGe formed on heavily doped p-type germanium.

AB - We have measured the physical properties and resistivity of nickel germanide thin films formed by the rapid thermal annealing of nickel metal on p-type germanium substrates. Rutherford back scattering and high-resolution electron diffraction confirm that the stoichiometry of the resulting nickel germanide film corresponds to NiGe and has an orthorhombic unit cell with dimensions comparable to that of bulk samples. Transmission electron microscopy shows a poly-crystalline film structure with grain size > 0.1 µm. The resistivity values for films annealed in the range 350°C-500°C are comparable to those of metal silicides. Measurements of the specific contact resistance suggest that values approaching 2 × 10-7 O.cm2 can be realized using NiGe formed on heavily doped p-type germanium.

KW - MOSFET

KW - Rutherford backscattering

KW - Contact resistance

KW - Electrical conductivity

KW - Electron diffraction

KW - Germanium compounds

KW - Nickel compounds

KW - Semiconductor thin films

U2 - 10.1109/LED.2004.842653

DO - 10.1109/LED.2004.842653

M3 - Article

SN - 0741-3106

VL - 26

SP - 151

EP - 153

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

Characterization of nickel germanide thin films for use as contacts to p-channel germanium MOSFETs

Abstract

Keywords

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