Characterization of point defects in CdTe by positron annihilation spectroscopy

M.R.M. Elsharkawy, G.S. Kanda, E.E. Abdel-Hady, D.J. Keeble (Lead / Corresponding author)

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Abstract

Positron lifetime measurements on CdTe 0.15 % Zn-doped by weight are presented, trapping to monovacancy defects is observed. At low temperatures localization at shallow binding energy positron traps dominates. To aid defect identification density functional theory calculated positron lifetimes and momentum distributions are obtained using relaxed geometry configurations of the monovacancy defects and the Te antisite. These calculations provide evidence that combined positron lifetime and coincidence Doppler spectroscopy measurements have the capability to identify neutral or negative charge states of the monovacancies, the Te antisite, A-centers, and divacancy defects in CdTe.
Original languageEnglish
Article number242102
Number of pages5
JournalApplied Physics Letters
Volume108
Issue number24
DOIs
Publication statusPublished - 13 Jun 2016

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