Compact Dual-Wavelength InAs/GaAs Quantum-Dot External-Cavity Laser Stabilized by a Single Volume Bragg Grating

N. S.  Daghestani; M. A. Cataluna; G. Ross; M. J.  Rose

doi:10.1109/LPT.2010.2096206

Compact Dual-Wavelength InAs/GaAs Quantum-Dot External-Cavity Laser Stabilized by a Single Volume Bragg Grating

N. S. Daghestani, M. A. Cataluna, G. Ross, M. J. Rose

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Stable dual-wavelength operation has been achieved by combining a single volume Bragg grating with a quantum-dot-based gain medium in a compact external cavity configuration, with extreme ease of alignment. The dual-wavelength output was centered at 1179.9 and 1182.8 nm, with each mode exhibiting a spectral bandwidth similar to 0.2 nm. A maximum output power of 186 mW was achieved, with both modes displaying a sidemode suppression-ratio (SMSR) of over 34 dB. Furthermore, the SMSR remained well over 26 dB within a broad current range (350-1000 mA) and temperature range (10.5 degrees C-40 degrees C). Unlike previous dual-wavelength configurations that used quantum-well-based devices, the quantum-dot-based laser here presented displays improved stability and resilience to changes in operating temperature and current.

Original language	English
Pages (from-to)	176-178
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	23
Issue number	3
DOIs	https://doi.org/10.1109/LPT.2010.2096206
Publication status	Published - 1 Feb 2011

Keywords

Quantum-dot lasers
semiconductor lasers
terahertz technology
volume Bragg gratings
SEMICONDUCTOR-LASERS
GENERATION
DIODE

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10.1109/LPT.2010.2096206

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title = "Compact Dual-Wavelength InAs/GaAs Quantum-Dot External-Cavity Laser Stabilized by a Single Volume Bragg Grating",

abstract = "Stable dual-wavelength operation has been achieved by combining a single volume Bragg grating with a quantum-dot-based gain medium in a compact external cavity configuration, with extreme ease of alignment. The dual-wavelength output was centered at 1179.9 and 1182.8 nm, with each mode exhibiting a spectral bandwidth similar to 0.2 nm. A maximum output power of 186 mW was achieved, with both modes displaying a sidemode suppression-ratio (SMSR) of over 34 dB. Furthermore, the SMSR remained well over 26 dB within a broad current range (350-1000 mA) and temperature range (10.5 degrees C-40 degrees C). Unlike previous dual-wavelength configurations that used quantum-well-based devices, the quantum-dot-based laser here presented displays improved stability and resilience to changes in operating temperature and current.",

keywords = "Quantum-dot lasers, semiconductor lasers, terahertz technology, volume Bragg gratings, SEMICONDUCTOR-LASERS, GENERATION, DIODE",

author = "Daghestani, {N. S.} and Cataluna, {M. A.} and G. Ross and Rose, {M. J.}",

year = "2011",

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doi = "10.1109/LPT.2010.2096206",

language = "English",

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journal = "IEEE Photonics Technology Letters",

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T1 - Compact Dual-Wavelength InAs/GaAs Quantum-Dot External-Cavity Laser Stabilized by a Single Volume Bragg Grating

AU - Daghestani, N. S.

AU - Cataluna, M. A.

AU - Ross, G.

AU - Rose, M. J.

PY - 2011/2/1

Y1 - 2011/2/1

N2 - Stable dual-wavelength operation has been achieved by combining a single volume Bragg grating with a quantum-dot-based gain medium in a compact external cavity configuration, with extreme ease of alignment. The dual-wavelength output was centered at 1179.9 and 1182.8 nm, with each mode exhibiting a spectral bandwidth similar to 0.2 nm. A maximum output power of 186 mW was achieved, with both modes displaying a sidemode suppression-ratio (SMSR) of over 34 dB. Furthermore, the SMSR remained well over 26 dB within a broad current range (350-1000 mA) and temperature range (10.5 degrees C-40 degrees C). Unlike previous dual-wavelength configurations that used quantum-well-based devices, the quantum-dot-based laser here presented displays improved stability and resilience to changes in operating temperature and current.

AB - Stable dual-wavelength operation has been achieved by combining a single volume Bragg grating with a quantum-dot-based gain medium in a compact external cavity configuration, with extreme ease of alignment. The dual-wavelength output was centered at 1179.9 and 1182.8 nm, with each mode exhibiting a spectral bandwidth similar to 0.2 nm. A maximum output power of 186 mW was achieved, with both modes displaying a sidemode suppression-ratio (SMSR) of over 34 dB. Furthermore, the SMSR remained well over 26 dB within a broad current range (350-1000 mA) and temperature range (10.5 degrees C-40 degrees C). Unlike previous dual-wavelength configurations that used quantum-well-based devices, the quantum-dot-based laser here presented displays improved stability and resilience to changes in operating temperature and current.

KW - Quantum-dot lasers

KW - semiconductor lasers

KW - terahertz technology

KW - volume Bragg gratings

KW - SEMICONDUCTOR-LASERS

KW - GENERATION

KW - DIODE

U2 - 10.1109/LPT.2010.2096206

DO - 10.1109/LPT.2010.2096206

M3 - Article

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SP - 176

EP - 178

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 3

ER -

Compact Dual-Wavelength InAs/GaAs Quantum-Dot External-Cavity Laser Stabilized by a Single Volume Bragg Grating

Abstract

Keywords

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