Comparison of measurement techniques for linewidth metrology on advanced photomasks

S. Smith; A. Tsiamis; J.T.M. Stevenson; A.J. Walton; M. McCallum; A.C. Hourd; R.G. Dixson; R.A. Allen; J.E. Potzick; M.W. Cresswell; N.G. Orji

doi:10.1109/TSM.2008.2010733

Comparison of measurement techniques for linewidth metrology on advanced photomasks

S. Smith, A. Tsiamis, J.T.M. Stevenson, A.J. Walton, M. McCallum, A.C. Hourd, R.G. Dixson, R.A. Allen, J.E. Potzick, M.W. Cresswell, N.G. Orji

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

This paper compares electrical, optical, and atomic force microscope (AFM) measurements of critical dimension (CD) made on a chrome on quartz photomask. Test structures suitable for direct, on-mask electrical probing have been measured using the above three techniques. These include cross-bridge linewidth structures and pairs of Kelvin bridge resistors designed to investigate dimensional mismatch. Overall, the results show very good agreement between the electrical measurements and those made with a calibrated CD-AFM system, while the optical metrology system overestimates the measured width. The uncertainty in each of the measurements has been considered, and for the first time an attempt has been made to describe the levels and sources of uncertainty in the electrical measurement of CD on advanced binary photomasks.

Original language	English
Pages (from-to)	72-79
Number of pages	8
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	22
Issue number	1
DOIs	https://doi.org/10.1109/TSM.2008.2010733
Publication status	Published - 2009

Access to Document

10.1109/TSM.2008.2010733

Cite this

@article{ed089b4274d0425c9db240d11f61a156,

title = "Comparison of measurement techniques for linewidth metrology on advanced photomasks",

abstract = "This paper compares electrical, optical, and atomic force microscope (AFM) measurements of critical dimension (CD) made on a chrome on quartz photomask. Test structures suitable for direct, on-mask electrical probing have been measured using the above three techniques. These include cross-bridge linewidth structures and pairs of Kelvin bridge resistors designed to investigate dimensional mismatch. Overall, the results show very good agreement between the electrical measurements and those made with a calibrated CD-AFM system, while the optical metrology system overestimates the measured width. The uncertainty in each of the measurements has been considered, and for the first time an attempt has been made to describe the levels and sources of uncertainty in the electrical measurement of CD on advanced binary photomasks.",

author = "S. Smith and A. Tsiamis and J.T.M. Stevenson and A.J. Walton and M. McCallum and A.C. Hourd and R.G. Dixson and R.A. Allen and J.E. Potzick and M.W. Cresswell and N.G. Orji",

year = "2009",

doi = "10.1109/TSM.2008.2010733",

language = "English",

volume = "22",

pages = "72--79",

journal = "IEEE Transactions on Semiconductor Manufacturing",

issn = "0894-6507",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Comparison of measurement techniques for linewidth metrology on advanced photomasks

AU - Smith, S.

AU - Tsiamis, A.

AU - Stevenson, J.T.M.

AU - Walton, A.J.

AU - McCallum, M.

AU - Hourd, A.C.

AU - Dixson, R.G.

AU - Allen, R.A.

AU - Potzick, J.E.

AU - Cresswell, M.W.

AU - Orji, N.G.

PY - 2009

Y1 - 2009

N2 - This paper compares electrical, optical, and atomic force microscope (AFM) measurements of critical dimension (CD) made on a chrome on quartz photomask. Test structures suitable for direct, on-mask electrical probing have been measured using the above three techniques. These include cross-bridge linewidth structures and pairs of Kelvin bridge resistors designed to investigate dimensional mismatch. Overall, the results show very good agreement between the electrical measurements and those made with a calibrated CD-AFM system, while the optical metrology system overestimates the measured width. The uncertainty in each of the measurements has been considered, and for the first time an attempt has been made to describe the levels and sources of uncertainty in the electrical measurement of CD on advanced binary photomasks.

AB - This paper compares electrical, optical, and atomic force microscope (AFM) measurements of critical dimension (CD) made on a chrome on quartz photomask. Test structures suitable for direct, on-mask electrical probing have been measured using the above three techniques. These include cross-bridge linewidth structures and pairs of Kelvin bridge resistors designed to investigate dimensional mismatch. Overall, the results show very good agreement between the electrical measurements and those made with a calibrated CD-AFM system, while the optical metrology system overestimates the measured width. The uncertainty in each of the measurements has been considered, and for the first time an attempt has been made to describe the levels and sources of uncertainty in the electrical measurement of CD on advanced binary photomasks.

UR - http://www.scopus.com/inward/record.url?scp=59849114945&partnerID=8YFLogxK

U2 - 10.1109/TSM.2008.2010733

DO - 10.1109/TSM.2008.2010733

M3 - Article

AN - SCOPUS:59849114945

SN - 0894-6507

VL - 22

SP - 72

EP - 79

JO - IEEE Transactions on Semiconductor Manufacturing

JF - IEEE Transactions on Semiconductor Manufacturing

IS - 1

ER -

Comparison of measurement techniques for linewidth metrology on advanced photomasks

Abstract

Access to Document

Other files and links

Fingerprint

Cite this