Computer modelling of multi-trapping and hopping transport in disordered semiconductors

C. Main, J. M. Marshall, S. Reynolds

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)


    In this paper we demonstrate a simple computational procedure for the simulation of transport in a disordered semiconductor in which both multi-trapping and hopping processes are occurring simultaneously. We base the simulation on earlier work on hopping transport, which used a Monte-Carlo method. We use the same model concepts, but employ a stochastic matrix approach to speed computation, and include also multi-trapping transitions between localised and extended states. We use the simulation to study the relative contributions of extended state conduction (with multi-trapping) and hopping conduction (via localised states) to transient photocurrents, for various distributions of localised gap states, and as a function of temperature. The implications of our findings for the interpretation of transient photocurrents are examined.
    Original languageEnglish
    Pages (from-to)107-114
    Number of pages8
    JournalJournal of Optoelectronics and Advanced Materials
    Issue number1
    Publication statusPublished - 2005


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