Computer modelling of non-equilibrium multiple-trapping and hopping transport in amorphous semiconductors

C. Main; J. M. Marshall; S. Reynolds; M. J. Rose; R. Bruggemann

Computer modelling of non-equilibrium multiple-trapping and hopping transport in amorphous semiconductors

C. Main, J. M. Marshall, S. Reynolds, M. J. Rose, R. Bruggemann

Research output: Chapter in Book/Report/Conference proceeding › Chapter (peer-reviewed)

Abstract

In this paper we demonstrate a simple computational procedure for the simulation of transport in a disordered semiconductor in which both multi-trapping and hopping processes are occurring simultaneously. We base the simulation on earlier work on hopping transport, which used a Monte-Carlo method. Using the same model concepts, we now employ a stochastic matrix approach to speed computation, and include also multi-trapping transitions between localised and extended states. We use the simulation to study the relative contributions of extended state conduction (with multi-trapping) and hopping conduction (via localised states) to transient photocurrents, for various distributions of localised gap states, and as a function of temperature. The implications of our findings for the interpretation of transient photocurrents are examined.

Original language	English
Title of host publication	Amorphous and nanocrystalline silicon science and technology--2005
Subtitle of host publication	Symposium March 28-April 1, 2005, San Francisco, California, U.S.A.
Editors	Robert W. Collins
Place of Publication	Warrendale, Pa.
Publisher	Materials Research Society
Pages	513-518
Number of pages	6
ISBN (Print)	1558998152
Publication status	Published - 2005
Event	Symposium A: Amorphous and Nanocrystalline Silicon Science and Technology - San Francisco, United States Duration: 28 Mar 2005 → 1 Apr 2005 http://www.mrs.org/s05-program-a/

Publication series

Name	Materials Research Society symposium proceedings
Volume	862

Conference

Conference	Symposium A: Amorphous and Nanocrystalline Silicon Science and Technology
Country/Territory	United States
City	San Francisco
Period	28/03/05 → 1/04/05
Internet address	http://www.mrs.org/s05-program-a/

Access to Document

http://www.mrs.org/s05-cfp-a/

Cite this

Main, C., Marshall, J. M., Reynolds, S., Rose, M. J., & Bruggemann, R. (2005). Computer modelling of non-equilibrium multiple-trapping and hopping transport in amorphous semiconductors. In R. W. Collins (Ed.), Amorphous and nanocrystalline silicon science and technology--2005: Symposium March 28-April 1, 2005, San Francisco, California, U.S.A. (pp. 513-518). (Materials Research Society symposium proceedings; Vol. 862). Materials Research Society. http://www.mrs.org/s05-cfp-a/

Main, C. ; Marshall, J. M. ; Reynolds, S. et al. / Computer modelling of non-equilibrium multiple-trapping and hopping transport in amorphous semiconductors. Amorphous and nanocrystalline silicon science and technology--2005: Symposium March 28-April 1, 2005, San Francisco, California, U.S.A.. editor / Robert W. Collins. Warrendale, Pa. : Materials Research Society, 2005. pp. 513-518 (Materials Research Society symposium proceedings).

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title = "Computer modelling of non-equilibrium multiple-trapping and hopping transport in amorphous semiconductors",

abstract = "In this paper we demonstrate a simple computational procedure for the simulation of transport in a disordered semiconductor in which both multi-trapping and hopping processes are occurring simultaneously. We base the simulation on earlier work on hopping transport, which used a Monte-Carlo method. Using the same model concepts, we now employ a stochastic matrix approach to speed computation, and include also multi-trapping transitions between localised and extended states. We use the simulation to study the relative contributions of extended state conduction (with multi-trapping) and hopping conduction (via localised states) to transient photocurrents, for various distributions of localised gap states, and as a function of temperature. The implications of our findings for the interpretation of transient photocurrents are examined.",

author = "C. Main and Marshall, {J. M.} and S. Reynolds and Rose, {M. J.} and R. Bruggemann",

year = "2005",

language = "English",

isbn = "1558998152",

series = "Materials Research Society symposium proceedings",

publisher = "Materials Research Society",

pages = "513--518",

editor = "Collins, {Robert W.}",

booktitle = "Amorphous and nanocrystalline silicon science and technology--2005",

note = "Symposium A: Amorphous and Nanocrystalline Silicon Science and Technology ; Conference date: 28-03-2005 Through 01-04-2005",

url = "http://www.mrs.org/s05-program-a/",

}

Main, C, Marshall, JM, Reynolds, S, Rose, MJ & Bruggemann, R 2005, Computer modelling of non-equilibrium multiple-trapping and hopping transport in amorphous semiconductors. in RW Collins (ed.), Amorphous and nanocrystalline silicon science and technology--2005: Symposium March 28-April 1, 2005, San Francisco, California, U.S.A.. Materials Research Society symposium proceedings, vol. 862, Materials Research Society, Warrendale, Pa., pp. 513-518, Symposium A: Amorphous and Nanocrystalline Silicon Science and Technology, San Francisco, United States, 28/03/05. <http://www.mrs.org/s05-cfp-a/>

Computer modelling of non-equilibrium multiple-trapping and hopping transport in amorphous semiconductors. / Main, C.; Marshall, J. M.; Reynolds, S. et al.
Amorphous and nanocrystalline silicon science and technology--2005: Symposium March 28-April 1, 2005, San Francisco, California, U.S.A.. ed. / Robert W. Collins. Warrendale, Pa.: Materials Research Society, 2005. p. 513-518 (Materials Research Society symposium proceedings; Vol. 862).

Research output: Chapter in Book/Report/Conference proceeding › Chapter (peer-reviewed)

TY - CHAP

T1 - Computer modelling of non-equilibrium multiple-trapping and hopping transport in amorphous semiconductors

AU - Main, C.

AU - Marshall, J. M.

AU - Reynolds, S.

AU - Rose, M. J.

AU - Bruggemann, R.

PY - 2005

Y1 - 2005

N2 - In this paper we demonstrate a simple computational procedure for the simulation of transport in a disordered semiconductor in which both multi-trapping and hopping processes are occurring simultaneously. We base the simulation on earlier work on hopping transport, which used a Monte-Carlo method. Using the same model concepts, we now employ a stochastic matrix approach to speed computation, and include also multi-trapping transitions between localised and extended states. We use the simulation to study the relative contributions of extended state conduction (with multi-trapping) and hopping conduction (via localised states) to transient photocurrents, for various distributions of localised gap states, and as a function of temperature. The implications of our findings for the interpretation of transient photocurrents are examined.

AB - In this paper we demonstrate a simple computational procedure for the simulation of transport in a disordered semiconductor in which both multi-trapping and hopping processes are occurring simultaneously. We base the simulation on earlier work on hopping transport, which used a Monte-Carlo method. Using the same model concepts, we now employ a stochastic matrix approach to speed computation, and include also multi-trapping transitions between localised and extended states. We use the simulation to study the relative contributions of extended state conduction (with multi-trapping) and hopping conduction (via localised states) to transient photocurrents, for various distributions of localised gap states, and as a function of temperature. The implications of our findings for the interpretation of transient photocurrents are examined.

M3 - Chapter (peer-reviewed)

SN - 1558998152

T3 - Materials Research Society symposium proceedings

SP - 513

EP - 518

BT - Amorphous and nanocrystalline silicon science and technology--2005

A2 - Collins, Robert W.

PB - Materials Research Society

CY - Warrendale, Pa.

T2 - Symposium A: Amorphous and Nanocrystalline Silicon Science and Technology

Y2 - 28 March 2005 through 1 April 2005

ER -

Main C, Marshall JM, Reynolds S, Rose MJ, Bruggemann R. Computer modelling of non-equilibrium multiple-trapping and hopping transport in amorphous semiconductors. In Collins RW, editor, Amorphous and nanocrystalline silicon science and technology--2005: Symposium March 28-April 1, 2005, San Francisco, California, U.S.A.. Warrendale, Pa.: Materials Research Society. 2005. p. 513-518. (Materials Research Society symposium proceedings).

Computer modelling of non-equilibrium multiple-trapping and hopping transport in amorphous semiconductors

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